Abstract:The low-k/ultra-low-k (LK/ULK) dielectric materials are incorporated in the 40 nm technology node and beyond to reduce resistance and capacitance (RC) delays and improve chip performances. However, the LK/ULK integrity becomes critical in a flip-chip process because of the LK/ULK materials' higher porosity and fragility in mechanics. In this paper, we proposed a three-dimensional (3D) one-level global/local finite element model to study stresses and fracture behaviors in the chip with ULK dielectrics in the heating flip-chip process using SIMULIA ABAQUS software. The global model includes an effective thin layer that is equivalent to Cu/low-k multilayer interconnections. On the basis of stress analysis, the precracks at different locations of back-end of line (BEOL) were introduced to estimate the values of energy release rate (ERR) along the 3D crack fronts and the possible crack extension was discussed. Furthermore, the ERR affected by the ULK modulus, polyimide thickness and copper pillar diameter was investigated. The analysis reveals that the values of ERR are higher in upper layers of the BEOL and their values at interfaces of Cu/ULK are as much as two times than in ULK. The ERR reaches its maximum value under the edge of copper pillar with higher first principal stresses. The crack propagation becomes critical due to a quickly rising value of ERR when the polyimide (PI) thickness or the diameter of copper pillar is decreased. The study helps to understand the fracture behaviors in BEOL of an advanced chip during a packaging process.

Stress Modeling for the Impacts of Flip Chip Process on the Ultralow-K Chips

The Stress Analysis and Parametric Studies for the Low-K Layers of a Chip in the Flip-Chip Process.

Fractures of Ultra-Low-k Material in a Chip During a Flip-Chip Process

Thermal Stress Analysis for the Low-k Dielectric Layers of Cu Interconnects in a 45 nm Chip

The Energy Release Rate of the Micro-Cracks in a Ultralow-K Chip During the Flip Chip Process

Thermal Stress Analysis of the Low-K Layer in a Flip-Chip Package

Simulation and Experimental Analysis of Thermomechanical Stress Around Interconnects for W2W Hybrid Bonding

Impact of Fabrication Process, Layout Variation and Packaging Process on Cu/Low-k Interconnect Reliability

Modeling the Impact of Layout Variation on Process Stress in Cu/Low K Interconnects

Influences of Material and Structural Factors on the Stress Conditions in Cu/low-k Chips During Cu Wire Bonding

Modeling Process Impact on Cu/Low k Interconnect Performance and Reliability

Modeling of interconnect stress evolution during BEOL process and packaging

Effects Of Various Assembly And Reliability Stresses On Chip To Package Interaction

Stress Monitoring in Flip Chip Packaging Process

Numerical Analysis of Packaging-Induced Failures in Cu/Low-k Interconnects

Silicon Interposer Reliability Optimization Through Process-Oriented Stress Modeling

The Influence of Properties of Solder Joint on the Stress of Underfill in Flip Chip Package

A Framework for Layout-Dependent STI Stress Analysis and Stress-Aware Circuit Optimization

Board level FEA reliability and stress modeling for chip-to-wafer bonded chiplet package

Stress Analysis of Cu/low-k Interconnect Structure During Whole Cu-CMP Process Using Finite Element Method.

Stress modeling of Cu/low-k BEoL - application to stress migration