Abstract:Reliability issues of semiconductors devices are always related with defects accumulation. Repeatedly switching processes of a semiconductor device could induce the defects accumulation which results in performance degradation. Bulk fin field-effect transistor (FinFET) devices, with a miniaturized three-dimensional structure, have a more complex reliability mechanism that requires detailed research. In this experiment, failure analysis was studied on the same batch of the FinFET devices which suffered performance degradation aging tests at different stress time. During this process, the magnitude of each applied electrical current was not exceeded the operating current. In this work, microstructural and chemical elements differences were characterized by transmission electron microscopy. It is founded that the interconnection part next to the core fin structure was destructed under the electrical over stress (EOS). These phenomena were not observed in the normal FinFET. It can be concluded that the effective contact area of the interconnection part decreased, resulting in the increased internal electrical field. Tungsten (W), as the metal 0 (M0) layer, migrated under defects accumulation. This work paves a guideline for the reliability improvements of FinFET.

Physical Study of Low-frequency TDDB Lifetime Deterioration in Advanced FinFETs

GHz AC to DC TDDB Modeling with Defect Accumulation Efficiency Model

GHz Cycle-to-Cycle Variation in Ultra-scaled FinFETs: from the Time-Zero to the Aging States.

Impact of Hot Carrier Degradation and Bias Temperature Instability on GHz Cycle-to-Cycle Variation in Ultra-Scaled FinFETs

Re-Examination of Hot Carrier Degradation Mechanism in Ultra-Scaled nFinFETs

TDDB Characteristics of Ultra-Thin HfN/HfO/sub 2/ Gate Stack

Lifetime Assessment of Thin Gate Oxides by Voltage Ramp TDDB Test

Time-Dependent Dielectric Breakdown on Subnanometer EOT nMOS FinFETs

Interconnection Reliability on FinFET Devices

Systematic Study on Predicting the Lifetime of Si pMOSFETs During NBTI Stress Based on Low-Frequency Noise.

Research on TDDB of 90nm NMOS Device

Transmission Line Pulse Induced Breakdown of FinFETs

Study On Influences Of Tin Capping Layer On Time-Dependent Dielectric Breakdown Characteristic Of Ultra-Thin Eot High-Kappa Metal Gate Nmosfet With Kmc Tddb Simulations

The electric field dependence of Cu migration induced dielectric failure in interlayer dielectric for integrated circuits

A Decrease in TDDB Lifetime of Commercial SiC Power MOSFETs under Repetitive Unclamped Inductive Switching Stresses

Catching the Missing EM Consequence in Soft Breakdown Reliability in Advanced FinFETs: Impacts of Self-heating, On-State TDDB, and Layout Dependence.

Intrinsic correlation between PBTI and TDDB degradations in nMOS HK/MG dielectrics

Deep insights into dielectric breakdown in tunnel FETs with awareness of reliability and performance co-optimization

Investigation Of Dibl Degradation In Nanoscale Finfets Under Various Hot Carrier Stresses

Degradation Mechanism of Short Channel P- FinFETs under Hot Carrier Stress and Constant Voltage Stress

An Investigation of Field Reduction Effect on NBTI Parameter Characterization and Lifetime Prediction Using a Constant Field Stress Method