Abstract:In replacing the conventional SiO2 gate dielectric with high-κ materials, new challenges emerge on understanding the kinetics of dielectric breakdown due to the different properties of the new bulk oxide and the interfacial layers at the substrate and gate electrode interface as well. Among several complexities, dielectric relaxation and recovery have received a lot of attention due to their promising applications in resistive random access memory (RRAM). In this study, we explore the stochastic nature of hard breakdown recovery in HfO2, taking advantage of ramped voltage stress (RVS) measurements, which are theoretically equivalent to the widely used constant voltage stress (CVS), while being significantly less time-consuming. We found that the possibility of recovery is largely dependent on the ramp rate during RVS as the dielectric needs adequate time and sufficient thermal budget to recover. The clustering model is found to be a good fit to the RVS data sets for post-recovery subsequent breakdown events and the extent of defect clustering is found to be more intense after increasing number of recovery events. The breakdown mechanism in the stack is confirmed by measuring the resistance change trends with temperature.

TDDB Characteristics of Ultra-Thin HfN/HfO/sub 2/ Gate Stack

Physical Study of Low-frequency TDDB Lifetime Deterioration in Advanced FinFETs

Stress induced leakage current and time dependent dielectric breakdown characteristics of ultra-thin HFO2 gate dielectrics

Nonlinear Fdtd Solution To The High-Field Conduction Model For Some Solid Dielectrics

GHz AC to DC TDDB Modeling with Defect Accumulation Efficiency Model

The TDDB Characteristics of Ultra-Thin Gate Oxide MOS Capacitors under Constant Voltage Stress and Substrate Hot-Carrier Injection

Scalability And Reliability Characteristics Of Cvd Hfo2 Gate Dielectrics With Hfn Electrodes For Advanced Cmos Applications

Localized Breakdown in Dielectrics and Macroscopic Charge Transport Through the Whole Gate Stack: A Comparative Study

Statistical nature of hard breakdown recovery in high-κ dielectric stacks studied using ramped voltage stress.

Time Dependent Dielectric Breakdown (TDDB) Characteristics of Metal–oxide–semiconductor Capacitors with HfLaO and HfZrLaO Ultra-Thin Gate Dielectrics

Impact of Electrical Stress on Defect Generation in Thin GeO<sub>2</sub>/Ge Gate Stacks Fabricated by Thermal Oxidation

Time dependent dielectric breakdown (TDDB) characteristics of metal-oxide-semiconductor capacitors with HfLaO and HfZrLaO ultra-thin gate dielectrics

Electrode Material Dependent Breakdown And Recovery In Advanced High-Kappa Gate Stacks

Series Resistance Effect on Time Zero Dielectrics Breakdown Characteristics of MOSCAP with Ultra-Thin EOT High-K/metal Gate Stacks

Breakdown Characteristics of HfO2 Gate Dielectrics Films Under Constant Current Stress

Experimental Investigation of Time Dependent Dielectric Breakdown and Failure Mechanism for Hf0.5Zr0.5O2 Ferroelectric Field Effect Transistors

Soft Breakdown Characteristics of Ultra-thin High-K HfO2 Gate Dielectrics

Reliability of Ultrathin High-κ Dielectrics on Chemical-vapor Deposited 2D Semiconductors

Ultrathin Hfo2(Eot < 0.75nm) Gate Stack With Tan/Hfn Electrodes Fabricated Using A High-Temperature Process

Time-Dependent Dielectric Breakdown on Subnanometer EOT nMOS FinFETs

Selected Topics on HfO/sub 2/ Gate Dielectrics for Future ULSI CMOS Devices