Abstract:AbstractStrained layer semiconductor structures provide possibilites for novel electronic devices. When a semiconductor layer is deposited epitaxially onto a single crystal substrate with the same structure but a slightly different lattice parameter, the semiconductor layer grows pseudomorphically with a misfit strain that can be accomodated elastically below a critical thickness. When the critical thickness is exceeded, the elastic strain energy builds up to a point where it becomes energetically favorable to form misfit dislocations. In the absence of a capping layer, surface roughening may also take place which causes strain relaxation in the form of 2D ridges or islands via surface diffusion. At sharp valley regions on the surface, amplified local stresses can cause further defect nucleation and propagation. These defects can be detrimental to the electrical performance of devices by acting as electron-hole recombination centers or current leakage channels. In this paper, we present observations and analyses of two novel defects nucleated in heteroepitaxial Si1−xGex thin films through surface roughening. Heteroepitaxial films 500 Å thick and containing 22% Ge are deposited by LPCVD. These initially flat films are subjected to various annealing conditions in a H2 atmosphere to induce morphological evolution and defect formation. High resolution transmission electron microscopy and atomic force microscopy have been used to study the morphology of defects at the film surface and at the film/substrate interface.

Impact of Electrical Stress on Defect Generation in Thin GeO<sub>2</sub>/Ge Gate Stacks Fabricated by Thermal Oxidation

Impact of Electrical Stress on Defect Generation in Thin GeO2/Ge Gate Stacks Fabricated by Thermal Oxidation

Effect of Stresses on Defect Nucleation in Si<sub>1−.x</sub>Ge<sub>x</sub>/Si Heteroepitaxial Systems

Defects in Ge-doped Cz-Si Annealed under High Stress

Impact of Channel Thickness on the NBTI Behaviors in the Ge-OI Pmosfets with Al2O3/GeOx Gate Stacks

Electrical Signature of the Defect Associated with Gate Oxide Breakdown

The Dynamic Reliability of Ultra-Thin Gate Oxide and Its Breakdown Characteristics

Ge gate stacks based on Ge oxide interfacial layers and the impact on MOS device properties

Degradation of Ultra-Thin Gate Oxide Ldd Nmosfet under Gidl Stress

Effect of Stresses on Defect Nucleation in Si1-xGex/Si Heteroepitaxial Systems

TDDB Characteristic and Breakdown Mechanism of Ultra-Thin SiO2/HfO2bilayer Gate Dielectrics

Degradation of Ultra-Thin Gate Oxide Nmosfets under Cvdt and She Stresses

Stress-induced High-Field Gate Leakage Current in Ultra-Thin Gate Oxide

Identification of Interfacial Defects in a Ge Gate Stack Based on Ozone Passivation

Localized Breakdown in Dielectrics and Macroscopic Charge Transport Through the Whole Gate Stack: A Comparative Study

Behaviors of Gate Induced Drain Leakage Stress in Lightly Doped Drain N-Channel Metal-Oxide-Semiconductor Field-Effect Transistors

Investigation of Electrical Characteristics of NdAlO3/SiO2 Stack Gate

Characteristics of Degradation under Gidl Stress in Ultrathin Gate Oxide Ldd Nmosfet'S

Gate stack dielectric degradation of rare-earth oxides grown on high mobility Ge substrates

Multi-Defect Generation Behavior in Ultra Thin Oxide Under DT Stresses

Non-uniform distribution of electron traps generated by fowler-nordheim stress in silicon dioxides