Abstract:As process technologies advance into deep sub-micrometer and nanometer scale, the charged device model (CDM) is now considered an important stress model for defining electrostatic discharge (ESD) reliability of integrated circuits. Thus the turn-on time of the ESD elements used in the protection circuit becomes important. At this time, there is no good method to evaluate the CDM ESD device turn-on speed. Equipment like VF-TLP and CC-TLP are too complicated and not precise for this purpose. A new method to evaluate the ESD device turn-on speed is presented in this paper. Based on this novel approach, some CDM ESD devices are analyzed based on the transmission line pulsing (TLP) tester. The designed devices include diodes, grounded-gate NMOS, SCRpsilas (silicon controlled rectifier), and Modified-Lateral SCRpsilas (MLSCR). The rising time of the pulse is set at 200 psec to accurately simulate real CDM pulses. The time-dependent voltage and current data are extracted and calculated from each pulse in the Time Domain Reflection (TDR) TLP tester. Two new ESD turn-on conditions are proposed and defined based on the transient currents in order to compare the relative speed of different ESD devices. The results show that the normalized turn-on time of different devices with various sizes and finger numbers do not correlate well with that obtained under the normal DC conditions, and the same device shows different turn-on characteristics under different pulses. These results enable devices to be designed for improved CDM ESD protection levels, and the present method can be used for ESD design for future nanometer technologies.

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On the ESD Protection and Non-Fatal ESD Strike on Nano CMOS Devices

Comparative Study of Reliability Degradation Behaviors of LDMOS and LDMOS-SCR ESD Protection Devices

Analysis of 65 Nm Technology Grounded-Gate NMOS for On-Chip ESD Protection Applications

Hot-carrier-induced On-Resistance Degradation of Step Gate Oxide NLDMOS

Effects of process variation on turn-on voltages of a multi-finger gate-coupled NMOS ESD protection device

Investigation of the Trigger Voltage Walk-In Effect in Ldmos for High- Voltage Esd Protection

Breakdown Voltage of Ultrathin Dielectric Film Subject to Electrostatic Discharge Stress

Trigger voltage walk-in effect of ESD protection device in HVCMOS

Study of Drain-Extended Nmos under Electrostatic Discharge Stress in 28 Nm and 40 Nm Cmos Process

Ggnmos As Esd Protection in Different Nanometer Cmos Process

FOD Based ESD Protection Devices in Deep Sub-micron Technology

Investigation of Turn-on Speeds of Electrostatic Discharge Protection Devices Using Transmission-Line Pulsing Technique

Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-Nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2Gate Dielectrics

Effects of Finger Width and Metal Routing of GGNMOS on ESD Protection

Combined Effect of TID Radiation and Electrical Stress on NMOSFETs

Evaluation of RF electrostatic discharge (ESD) protection in 0.18-μm CMOS technology

Characterization and Failure Analysis of Sub-10 Nm Diameter, Gate-All-around Nanowire Field-Effect Transistors Subject to Electrostatic Discharge (ESD)

The analysis of ESD degradation in p-type poly-Si thin film transistor

Transmission Line Pulse Induced Breakdown of FinFETs

Analysis of Trigger Behavior of High Voltage LDMOS under TLP and VFTLP Stress