Electro-Thermal-Stress analysis of a LDMOS FET Breakdown under High Power Microwave pulses

Zhang Cheng,Weifeng Zhou,Liang Zhou,Wenyan Yin
2013-01-01
Abstract:This paper presents thermal and stress breakdown effects in a LDMOS FET under the impact of High Power Microwave pulses. Experimental investigations of the LDMOS FET-based power amplifier (PA) are performed under HPM pulses. The Electro-Thermal- Stress (E-T-S) breakdown of the device is observed. To characterize temperature and stress distribution of the LDMOS FET, we developed a physical electro-thermal-stress model using time-domain finite-element method. Simulations are performed and compared with measurements. This research can provide useful knowledge for understanding the reliability of RF power devices.
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