Abstract:In this paper, simulation modeling was carried out using Sentaurus Technology Computer-Aided Design. Two types of high electron mobility transistors (HEMT), an AlGaN/GaN/AlGaN double heterojunction and AlGaN/GaN single heterojunction, were designed and compared. The breakdown characteristics and damage mechanisms of the two devices under the injection of high-power microwaves (HPM) were studied. The variation in current density and peak temperature inside the device was analyzed. The effect of Al components at different layers of the device on the breakdown of HEMTs is discussed. The effect and law of the power damage threshold versus pulse width when the device was subjected to HPM signals was verified. It was shown that the GaN HEMT was prone to thermal breakdown below the gate, near the carrier channels. A moderate increase in the Al component can effectively increased the breakdown voltage of the device. Compared with the single heterojunction, the double heterojunction HEMT devices were more sensitive to Al components. The high domain-limiting characteristics effectively inhibited the overflow of channel electrons into the buffer layer, which in turn regulated the current density inside the device and improved the temperature distribution. The leakage current was reduced and the device switching characteristics and breakdown voltage were improved. Moreover, the double heterojunction device had little effect on HPM power damage and high damage resistance. Therefore, a theoretical foundation is proposed in this paper, indicating that double heterojunction devices are more stable compared to single heterojunction devices and are more suitable for applications in aviation equipment operating in high-frequency and high-voltage environments. In addition, double heterojunction GaN devices have higher radiation resistance than SiC devices of the same generation.

Electro-thermal-stress interaction of GaN HEMT breakdown induced by high power microwave pulses

Investigation on Failure Mechanisms of GaN HEMT Caused by High-Power Microwave (HPM) Pulses

Electro-Thermal-Stress analysis of a LDMOS FET Breakdown under High Power Microwave pulses

Experimental Investigation and Analysis of the LDMOS FET Breakdown Under HPM Pulses

Experiments and Comparisons of Power to Failure for SiGe-Based Low-Noise Amplifiers under High-Power Microwave Pulses

Analysis of Electro-Thermal-Stress Failure of the Ldmos Fet under Hpm Pulses

Electrothermal breakdown of an intentional electromagnetic pulse injected into Ku-band gaas Mesfet-based low noise amplifier(LNA)

Investigation on conductive electromagnetic pulse (EMP) effects on the breakdown of GaAs MESFET-built power amplifiers (PA)

Analysis of the Thermal Effects of Gaasfets under the High-Power Electromagnetic Pulses

Comparisons of power to failure for low-noise amplifiers under high-power microwave pulses

Thermal Effect Simulation of GaN HFETs under CW and Pulsed Operation.

Strain Effect on the Performance of Proton-Irradiated GaN-based HEMT

Electrothermal-Stress Interactions of LDMOS FET Induced by DCI RF-Pulses

Study of Self-Heating and High-Power Microwave Effects for Enhancement-Mode p-Gate GaN HEMT

Effect of Stress-Dependent Thermal Conductivity on Thermo-Mechanical Coupling Behavior in GaN-Based Nanofilm under Pulse Heat Source

Damage Effects and Mechanisms of High-Power Microwaves on Double Heterojunction GaN HEMT

Investigating the Failure Mechanism of p-GaN Gate HEMTs under High Power Stress with a Transparent ITO Gate

Measurement of Piezoresistance Coefficient Based on GaN HEMT Micro-Accelerometers

Stress Reliability Study of GaN HEMT Devices

Recent Progress of Physical Failure Analysis of GaN HEMTs

The ESD Behavior of Enhancement GaN HEMT Power Device with p-GaN Gate Structure