Abstract:A new generation of high-efficiency power devices is being developed using wide bandgap (WBG) semiconductors, like GaN and SiC, which are emerging as attractive alternatives to silicon. The recent interest in GaN has been piqued by its excellent material characteristics, including its high critical electric field, high saturation velocity, high electron mobility, and outstanding thermal stability. Therefore, the superior performance is represented by GaN-based high electron mobility transistor (HEMT) devices. They can perform at higher currents, voltages, temperatures, and frequencies, making them suitable devices for the next generation of high-efficiency power converter applications, including electric vehicles, phone chargers, renewable energy, and data centers. Thus, this review article will provide a basic overview of the various technological and scientific elements of the current GaN HEMTs technology. First, the present advancements in the GaN market and its primary application areas are briefly summarized. After that, the GaN is compared with other devices, and the GaN HEMT device's operational material properties with different heterostructures are discussed. Then, the normally-off GaN HEMT technology with their different types are considered, especially on the recessed gate metal insulator semiconductor high electron mobility transistor (MISHEMT) and p-GaN. Hereafter, this review also discusses the reliability concerns of the GaN HEMT which are caused by trap effects like a drain, gate lag, and current collapse with numerous types of degradation. Eventually, the breakdown voltage of the GaN HEMT with some challenges has been studied.

Recent Progress of Physical Failure Analysis of GaN HEMTs

Electro-thermal-stress interaction of GaN HEMT breakdown induced by high power microwave pulses

Investigation on Failure Mechanisms of GaN HEMT Caused by High-Power Microwave (HPM) Pulses

Recent Advances in GaN‐Based Power HEMT Devices

Failure Mechanisms Analysis in GaN HEMTs under High-Power Microwave Pulses

Electro-thermal-stress Analysis of AlGaN/GaN HEMTs Breakdown under Intentional EMI

Failure Analysis of 200V P-Gan HEMT under Unclamped Inductive Switching Conditions

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

An insight to current collapse in GaN HEMT and suppressing techniques

Stress Reliability Study of GaN HEMT Devices

Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs

Challenges and advancements in p-GaN gate based high electron mobility transistors (HEMTs) on silicon substrates

Study on Abnormal Gate Structures of GaN HEMT Devices

Reliability, Applications and Challenges of GaN HEMT Technology for Modern Power Devices: A Review

Study of the Breakdown Failure Mechanisms for Power AlGaN/GaN HEMTs Implemented Using a RF Compatible Process

Review on Main Gate Characteristics of P-Type GaN Gate High-Electron-Mobility Transistors

Analysis of GaN Cap Layer Effecting on Critical Voltage for Electrical Degradation of AlGaN/GaN HEMT

Stability, Reliability, and Robustness of GaN Power Devices: A Review

Investigating the Failure Mechanism of p-GaN Gate HEMTs under High Power Stress with a Transparent ITO Gate

Failure mechanism analysis of a discrete 650V enhancement mode GaN-on-Si power device with reverse conduction accelerated power cycling test

Degradation Mechanisms of Mg-doped GaN/AlN Superlattices HEMTs under Electrical Stress