Abstract:<p>The ever‐increasing power density and operation frequency in electrical power conversion systems require the development of power devices that can outperform conventional Si‐based devices. Gallium nitride (GaN) has been regarded as the candidate for next‐generation power devices to improve the conversion efficiency in high‐power electric systems. GaN‐based high electron mobility transistors (HEMTs) with normally‐off operation is an important device structure for different application scenarios. In this review, an overview of a series of effective approaches to improve the performance of GaN‐based power HEMT devices is given. Modified epistructures are presented to suppress defects and current leakage, and low‐damage recess‐free processes are discussed in fabricating normally‐off HEMTs. Possible effects of dielectrics on a metal–insulator–semiconductor (MIS) structure are also intensively introduced. Metal/semiconductor contact engineering is investigated, and fabrication of Au‐free ohmic contact and graphene insertion layer to enhance the device performance is emphasized. Finally, the effects of field plates are studied through the use of simulated and fabricated devices.</p>

What problem does this paper attempt to address?

The paper primarily explores the application and technological improvements of Gallium Nitride (GaN) based High Electron Mobility Transistors (HEMT) in power electronic systems. As the power density and operating frequency in power conversion systems continue to increase, traditional silicon-based devices are approaching their physical limits and cannot meet the demands of future power electronic applications. Therefore, GaN is considered an ideal candidate material for the next generation of high-power, high-frequency electronic devices due to its higher breakdown field strength and drift velocity. The paper specifically discusses the following points: 1. **Normally-on and Normally-off GaN HEMT Structures**: The naturally formed 2DEG leads to normally-on GaN HEMTs having a negative threshold voltage. However, to suppress static power consumption and improve safety, high-power electronic systems prefer normally-off operation modes. Therefore, normally-off GaN HEMTs can be achieved by modifying the gate region through band engineering or neutralizing bound charges. 2. **Improved Buffer Layer Structures**: To enhance the performance of GaN HEMTs, several improved buffer layer designs were studied, including the use of iron (Fe) or carbon (C) doping to form semi-insulating buffer layers, thereby reducing leakage current and punch-through effects. 3. **Low-Damage HEMT Manufacturing Techniques**: Various low-damage manufacturing processes, such as digital etching processes and strain engineering, have been developed to reduce device damage during manufacturing and improve device reliability. 4. **Metal/Semiconductor Contact Engineering**: Device performance was further enhanced by studying techniques such as metal-free ohmic contacts and graphene insertion layers. 5. **Effect of Field Plates**: The impact of field plates on device performance was studied using both simulations and actual fabricated devices. In summary, this paper aims to improve the key characteristics of GaN-based HEMT devices through material structure and manufacturing process improvements, enabling better performance in high-power and high-frequency applications.

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