Abstract:The small gate overvoltage margin is a key reliability concern of the GaN Schottky-type p-gate high electron mobility transistor (GaN SP-HEMT). Current evaluation of gate reliability in GaN SP-HEMTs relies on either the DC bias stress or pulse I-V method, neither of which resembles the gate voltage (VGS) overshoot waveform in practical converters. This work develops a new circuit method to characterize the gate robustness and reliability in GaN SP-HEMTs, which features a resonance-like VGS ringing with pulse width down to 20 ns and an inductive switching concurrently in the drain-source loop. Using this method, the gate's single-pulse failure boundary, i.e., dynamic gate breakdown voltage (BVDYN), is first obtained under the hard switching (HSW) and drain-source grounded (DSG) conditions. The gate's switching lifetime is then tested under the repetitive VGS ringing, and the number of switching cycles to failure (SCTF#) is fitted by Weibull or Lognormal distributions. The SCTF# shows a power law relation with the VGS peak value and little dependence on the switching frequency. More interestingly, the gate's BVDYN and lifetime are both higher in HSW than those in DSG, as well as at higher temperatures. Such findings, as well as the gate degradation behaviors in a prolonged overvoltage stress test, can be explained by the time-dependent Schottky breakdown mechanism. The gate leakage current is found to be the major precursor of gate degradation. At 125 oC and 100 kHz, the VGS limits for a 10-year lifetime are projected to be ∼6 V and ∼10 V under the DSG and HSW conditions, respectively. These results provide a new qualification method and reveal new physical insights for gate reliability and robustness in p-gate GaN HEMTs

Stress Reliability Study of GaN HEMT Devices

Electro-thermal-stress interaction of GaN HEMT breakdown induced by high power microwave pulses

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

Stability of GaN HEMT Device Under Static and Dynamic Gate Stress

High-field-induced Electron Detrapping in an AlGaN/GaN High Electron Mobility Transistor

Measurement of Piezoresistance Coefficient Based on GaN HEMT Micro-Accelerometers

Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs

Reliability study of AlGaN/GaN HEMT under electromagnetic, RF and DC stress

Electrical Properties and Reliability of AlGaN/GaN High Electron Mobility Transistor under RF Overdrive Stress at High Temperature

Reliability assessment of high-power GaN-HEMT devices with different buffers under influence of gate bias and high-temperature tests.

Evaluation on Temperature-Dependent Transient VT Instability in p-GaN Gate HEMTs under Negative Gate Stress by Fast Sweeping Characterization

Gate Reliability of P-Gan Gate AlGaN/GaN High Electron Mobility Transistors

Gate Robustness and Reliability of P-Gate GaN HEMT Evaluated by a Circuit Method

An Extensive Negative Gate Bias Stress Degradation Mechanism in GaN MIS-HEMTs for Aerospace Applications

A Study on the Dynamic Switching Characteristics of p-GaN HEMT Power Devices

The ESD Behavior of Enhancement GaN HEMT Power Device with p-GaN Gate Structure

Reliability of enhancement-mode p-GaN gate GaN HEMT with multiple field plates

Study on Single Event Effects of Enhanced GaN HEMT Devices under Various Conditions

Gate Reliability and its Degradation Mechanism in the Normally OFF High-Electron-Mobility Transistors With Regrown p-GaN Gate

Research on the Reliability of Threshold Voltage Based on GaN High-Electron-Mobility Transistors

High-VTH E-Mode GaN HEMTs with Robust Gate-Bias-Dependent VTH Stability Enabled by Mg-Doped P-Gan Engineering