Abstract:Multi-material, multi-layered systems such as AlGaN/GaN high electron mobility transistor (HEMTs) contain residual mechanical stresses that arise from sharp contrasts in device geometry and materials parameters. These stresses, which can be either tensile or compressive, are difficult to detect and eliminate because of their highly localized nature. We propose that their high stored internal energy make potential sites for defect nucleation sites under radiation, particularly if their locations coincide with the electrically sensitive regions of a transistor. In this study, we validate this hypothesis with molecular dynamic simulation and experiments exposing both pristine and annealed HEMTS to 2.8 MeV Au+3 irradiation. Our unique annealing process uses mechanical momentum of electrons, also known as the electron wind force (EWF) to mitigate the residual stress at room temperature. High-resolution transmission electron microscopy (TEM) and cathodoluminescence spectra reveal the reduction of point defects and dislocations near the two-dimensional electron gas region of EWF-treated devices compared to pristine devices. The EWF-treated HEMTs showed relatively higher resilience with approximately 10% less degradation of drain saturation current and ON-resistance and 5% less degradation of peak transconductance. Both mobility and carrier concentration of the EWF-treated devices were less impacted compared to the pristine devices. Our results suggest that the lower density of nanoscale stress localization contributed to the improved radiation tolerance of the EWF-treated devices. Intriguingly, the EWF is found to modulate the defect distribution by moving the defects to electrically less sensitive regions in the form of dislocation networks, which act as sinks for the radiation induced defects and this assisted faster dynamic annealing.

Reliability study of AlGaN/GaN HEMT under electromagnetic, RF and DC stress

Electro-thermal-stress interaction of GaN HEMT breakdown induced by high power microwave pulses

Stress Reliability Study of GaN HEMT Devices

Investigation on Thermo-Mechanical Responses in High Power Multi-Finger AlGaN/GaN HEMTs

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

Role of mechanical stress localizations on the radiation hardness of AlGaN/GaN high electron mobility transistors

Degradation Behavior and Trap Analysis Based on Low-Frequency Noise of AlGaN/GaN HEMTs Subjected to Radio Frequency Overdrive Stress

GaN HEMT Degradation: Effect of RF Stress

High-field-induced Electron Detrapping in an AlGaN/GaN High Electron Mobility Transistor

Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs

Electro-thermal-stress Analysis of AlGaN/GaN HEMTs Breakdown under Intentional EMI

Electrical Properties and Reliability of AlGaN/GaN High Electron Mobility Transistor under RF Overdrive Stress at High Temperature

Analysis of Algan/Gan High Electron Mobility Transistors Failure Mechanism under Semi-On Dc Stress

Total ionizing dose effects in passivated and unpassivated AlGaN/GaN HEMTs

Characterization of 1/f Noise in GaN-based HEMTs under High Dc Voltage Stress (invited Paper)

Study of the Breakdown Failure Mechanisms for Power AlGaN/GaN HEMTs Implemented Using a RF Compatible Process

High Performance AlGaN/GaN Hemts on GaN Substrates

Degradation Mechanisms of Mg-doped GaN/AlN Superlattices HEMTs under Electrical Stress

Investigation of Gate Degradation Characteristics of AlGaN/GaN HEMTs under PWM Stress

Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review

Reliability assessment of high-power GaN-HEMT devices with different buffers under influence of gate bias and high-temperature tests.