Abstract:We report systematic investigations on hot-electron degradation in GaN-based HEMTs with different gate recess depths, d r , fabricated by reactive ion etching. The experimental data stipulate two different mechanisms underlying the hot-electron degradations of the devices. During the initial phase of hot-electron injection significant changes were observed in the dc characteristics of the devices and the flicker noise power spectral density, SV(f).The degradations were partially recovered by annealing the devices at 100°C for 20 minutes. It is shown that for stress time ts≤25 hours the reverse bias gate current, IG, decreases systematically with ts, whereas SV(f) fluctuates randomly. Detailed analyses of SV(f) measured over a wide range temperatures show that the initial degradations originate from the percolation of carriers in the 2DEG. The significant increase in the flicker noise during the initial phase of high-voltage stress is due to the generation of H+ at the AlGaN/GaN interface. The fluctuations in the magnitudes of SV(f) for ts≤25 hours originate from the motion of the H+ in the direction of the electric field. This results in the modulation of the percolation path leading to significant variations in SV(f) as a function of ts. For ts>25 hours both IG and SV(f) are stabilized resulting from the drifting of the H+ away from the gate region. Further stressing beyond 25 hours indicate strong dependencies of the device lifetimes on dr suggesting significant material degradation due to the reactive ion etching process for the fabrication of the gate recesses. Detailed characterization of the noise show that the final irreversible degradation is due to the generation of traps at the AlGaN/GaN interface.

Investigation of Gate Degradation Characteristics of AlGaN/GaN HEMTs under PWM Stress

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type P-Gan Gate HEMTs

Observation Of Self-Recoverable Gate Degradation In P-Gan Algan/Gan Hemts After Long-Term Forward Gate Stress: The Trapping & Detrapping Dynamics Of Hole/Electron

V T Shift and Recovery Mechanisms of p-GaN Gate HEMTs Under DC/AC Gate Stress Investigated by Fast Sweeping Characterization

Measurement of piezoresistance coefficient with different gate voltages of GaN HEMT micro-accelerometer

Degradation Behavior and Mechanism of GaN HEMTs with P-Type Gate in the Third Quadrant under Repetitive Surge Current Stress

Failure Behavior and Mechanism of P-Gan Gate AlGaN/GaN HEMTs in the Third Quadrant under Repetitive Surge Current Stress

Low-Frequency Noise Characterization of Hot-Electron Degradation in Gan-Based Hemts

Gate Reliability of P-Gan Gate AlGaN/GaN High Electron Mobility Transistors

Analysis of Algan/Gan High Electron Mobility Transistors Failure Mechanism under Semi-On Dc Stress

A Comparative Study on the Degradation Behaviors of Ferroelectric Gate GaN HEMT with PZT and PZT/Al2O3 Gate Stacks

Degradation Behavior and Trap Analysis Based on Low-Frequency Noise of AlGaN/GaN HEMTs Subjected to Radio Frequency Overdrive Stress

Comparative Investigation on the Repetitive Short-Circuit Capability of 100 V Commercial p-GaN Gate Power HEMTs With Different Processing and Structure

Investigating the Failure Mechanism of p-GaN Gate HEMTs under High Power Stress with a Transparent ITO Gate

Characterization of 1/f Noise in GaN-based HEMTs under High Dc Voltage Stress (invited Paper)

Study of the Short-Circuit Capability and Device Instability of p-GaN Gate HEMTs by Repetitive Short-Circuit Stress

Analysis of VTH Degradation and Recovery Behaviors of P-Gan Gate HEMTs under Forward Gate Bias

Mechanism Analysis of Dynamic On-State Resistance Degradation for a Commercial GaN HEMT Using Double Pulse Test

The degradation mechanism of high power S-band AlGaN/GaN HEMTs under high temperature

Investigation of the Progressive Gate Breakdown Behaviors in p-GaN Gate HEMTs