Abstract:The leakage current suppression mechanism in AlGaN/GaN High Electron Mobility Transistors (HEMTs) is investigated. It is known that leakage current can cause severe reliability problems for HEMT devices and conventional AlGaN/GaN HEMT devices suffer from detrimental off-state drain leakage current issues, especially under high off-state drain bias. Therefore, a leakage current suppression technique featuring hybrid-Schottky/ohmic-drain contact is discussed. Through the 2-zones leakage current suppression mechanism by the hybrid-Schottky/drain metal including the shielding effect of the rough ohmic-drain metal morphology and the drain side electric field modulation, AlGaN/GaN HEMT featuring this novel technique can significantly enhance the leakage current suppression capability and improve the breakdown voltage. An analytical method using loop-voltage-scanning is proposed to illustrate the optimization procedure of the hybrid-Schottky/ohmic drain metallization on leakage current suppression. Through the comparison of the loop leakage current hysteresis of conventional ohmic drain HEMT and hybrid-Schottky/ohmic drain, the leakage current suppression mechanism is verified through the leakage current considering surface acceptor-like trap charging/discharging model. Device featuring the hybrid-Schottky/ohmic drain technique shows an improvement in breakdown voltage from 450 V (with no Schottky drain metal) to 855 V with a total drift region length of 9 mu m, indicating enhanced off-state reliability characteristics for the AlGaN/GaN HEMT devices. (C) 2014 Elsevier Ltd. All rights reserved.

Analysis of Algan/Gan High Electron Mobility Transistors Failure Mechanism under Semi-On Dc Stress

Hot-carrier-induced On-Resistance Degradation of Step Gate Oxide NLDMOS

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

High-field-induced Electron Detrapping in an AlGaN/GaN High Electron Mobility Transistor

Observation and Analysis of Anomalous V TH Shift of p-GaN Gate HEMTs Under off-State Drain Stress

Electrical Degradation of In Situ SiN/AlGaN/GaN MIS-HEMTs Caused by Dehydrogenation and Trap Effect Under Hot Carrier Stress

Gate Reliability of P-Gan Gate AlGaN/GaN High Electron Mobility Transistors

Study on the Electrical Degradation of AlGaN/GaN MIS-HEMTs Induced by Residual Stress of SiNx Passivation

Degradation Behavior and Trap Analysis Based on Low-Frequency Noise of AlGaN/GaN HEMTs Subjected to Radio Frequency Overdrive Stress

V T Shift and Recovery Mechanisms of p-GaN Gate HEMTs Under DC/AC Gate Stress Investigated by Fast Sweeping Characterization

OFF-State Drain-Voltage-Stress-Induced VTH Instability in Schottky-Type P-Gan Gate HEMTs

Analysis of VTH Degradation and Recovery Behaviors of P-Gan Gate HEMTs under Forward Gate Bias

Total ionizing dose effects in passivated and unpassivated AlGaN/GaN HEMTs

Analysis of Trap and Recovery Characteristics Based on Low-Frequency Noise for E-Mode GaN HEMTs under Electrostatic Discharge Stress

Gate Reliability and its Degradation Mechanism in the Normally OFF High-Electron-Mobility Transistors With Regrown p-GaN Gate

The Transition of Threshold Voltage Shift of Al$_{\text{2}}$O$_{\text{3}}$/Si$_{\text{3}}$N$_{\text{4}}$ AlGaN/GaN MIS-HEMTs Under Negative Gate Bias Stress From DC to AC

Buffer-Induced Time-Dependent OFF-State Leakage in AlGaN/GaN High Electron Mobility Transistors on Silicon

The ID Instability Induced by Reverse Conduction Stress in P-Gan Gate HEMTs

Investigating the Failure Mechanism of p-GaN Gate HEMTs under High Power Stress with a Transparent ITO Gate

Study of the Leakage Current Suppression for Hybrid-Schottky/ohmic Drain AlGaN/GaN HEMT

Threshold Voltage Improvement and Leakage Reduction of AlGaN/GaN HEMTs Using Dual-Layer SiNx Stressors