Abstract:In this paper, we carried out a systematic investigation on gate degradation and the physical mechanism of the Schottky-type <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -GaN gate HEMTs under positive gate voltage stress. The frequency- and temperature-dependent measurements have been conducted. It is found that the time-dependent gate degradation exhibits weak relevance with frequencies ranging from 10 to 100 kHz under dynamic gate stress and is similar to that in static gate stress. Both the gate breakdown voltage (BV) and mean-time-to-failure (MTTF) show positive temperature dependence. Moreover, the current–voltage ( <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I–V</italic> ) characteristics and threshold voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {TH}}$ </tex-math></inline-formula> ) instability of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -GaN devices before/after gate degradation are compared and analyzed. The degraded Schottky junction exhibits an ohmic-like gate behavior. It is revealed that under a large gate bias stress, high-energy electrons accelerated in the depletion region of the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -GaN layer would promote the formation of defect levels near the metal/ <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -GaN interface, leading to the initial <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -GaN layer degradation. The subsequent high gate leakage density could cause the final degradation of the AlGaN barrier.

Gate Reliability and its Degradation Mechanism in the Normally OFF High-Electron-Mobility Transistors With Regrown p-GaN Gate

Gate Robustness and Reliability of P-Gate GaN HEMT Evaluated by a Circuit Method

Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type <inline-formula> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula>-GaN Gate HEMTs

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

Investigation of the Progressive Gate Breakdown Behaviors in p-GaN Gate HEMTs

Degradation Mechanisms of Gate Leakage in GaN-Based HEMTs at Low Dose Rate Irradiation

Analysis of VTH Degradation and Recovery Behaviors of P-Gan Gate HEMTs under Forward Gate Bias

Characterization and analysis of low-temperature time-to-failure behavior in forward-biased Schottky-type <i>p</i>-GaN gate HEMTs

Gate Reliability of P-Gan Gate AlGaN/GaN High Electron Mobility Transistors

Low-Temperature Accelerated Gate Reliability of Schottky-type p-GaN Gate HEMTs

High V th and Improved Gate Reliability in P-GaN Gate HEMTs with Oxidation Interlayer

Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs

Main Mechanism Responsible for pGaN Gate Breakdown and Lifetime Projection in GaN HEMTs

Investigating the Failure Mechanism of p-GaN Gate HEMTs under High Power Stress with a Transparent ITO Gate

1300 V Normally-OFF p-GaN Gate HEMTs on Si With High ON-State Drain Current

Comparative Investigation on the Repetitive Short-Circuit Capability of 100 V Commercial p-GaN Gate Power HEMTs With Different Processing and Structure

A Comparative Study on the Degradation Behaviors of Ferroelectric Gate GaN HEMT with PZT and PZT/Al2O3 Gate Stacks

Normally-off GaN HEMTs with InGaN P-Gate Cap Layer Formed by Polarization Doping

Analysis of Algan/Gan High Electron Mobility Transistors Failure Mechanism under Semi-On Dc Stress

Temperature-Dependent Gate Degradation of P-Gan Gate HEMTs under Static and Dynamic Positive Gate Stress

Gate reliability enhancement of p-GaN gate HEMTs with oxygen compensation technique