Abstract:The small gate overvoltage margin is a key reliability concern of the GaN Schottky-type p-gate high electron mobility transistor (GaN SP-HEMT). Current evaluation of gate reliability in GaN SP-HEMTs relies on either the DC bias stress or pulse I-V method, neither of which resembles the gate voltage (VGS) overshoot waveform in practical converters. This work develops a new circuit method to characterize the gate robustness and reliability in GaN SP-HEMTs, which features a resonance-like VGS ringing with pulse width down to 20 ns and an inductive switching concurrently in the drain-source loop. Using this method, the gate's single-pulse failure boundary, i.e., dynamic gate breakdown voltage (BVDYN), is first obtained under the hard switching (HSW) and drain-source grounded (DSG) conditions. The gate's switching lifetime is then tested under the repetitive VGS ringing, and the number of switching cycles to failure (SCTF#) is fitted by Weibull or Lognormal distributions. The SCTF# shows a power law relation with the VGS peak value and little dependence on the switching frequency. More interestingly, the gate's BVDYN and lifetime are both higher in HSW than those in DSG, as well as at higher temperatures. Such findings, as well as the gate degradation behaviors in a prolonged overvoltage stress test, can be explained by the time-dependent Schottky breakdown mechanism. The gate leakage current is found to be the major precursor of gate degradation. At 125 oC and 100 kHz, the VGS limits for a 10-year lifetime are projected to be ∼6 V and ∼10 V under the DSG and HSW conditions, respectively. These results provide a new qualification method and reveal new physical insights for gate reliability and robustness in p-gate GaN HEMTs

Low-Temperature Accelerated Gate Reliability of Schottky-type p-GaN Gate HEMTs

Characterization and analysis of low-temperature time-to-failure behavior in forward-biased Schottky-type <i>p</i>-GaN gate HEMTs

Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type P-Gan Gate HEMTs

Temperature-Dependent Gate Degradation of P-Gan Gate HEMTs under Static and Dynamic Positive Gate Stress

Temperature-Dependent Dynamic Performance of p-GaN Gate HEMT on Si

Gate Reliability and its Degradation Mechanism in the Normally OFF High-Electron-Mobility Transistors With Regrown p-GaN Gate

P-GaN Gate HEMTs: A Solution to Improve the High-Temperature Gate Lifetime

Gate Robustness and Reliability of P-Gate GaN HEMT Evaluated by a Circuit Method

Evaluation on Temperature-Dependent Transient VT Instability in p-GaN Gate HEMTs under Negative Gate Stress by Fast Sweeping Characterization

Investigating the Failure Mechanism of p-GaN Gate HEMTs under High Power Stress with a Transparent ITO Gate

Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization

Time-Resolved Threshold Voltage Instability of 650-V Schottky Type p-GaN Gate HEMT Under Temperature-Dependent Forward and Reverse Gate Bias Conditions

Investigation of the Progressive Gate Breakdown Behaviors in p-GaN Gate HEMTs

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

Gate Reliability of P-Gan Gate AlGaN/GaN High Electron Mobility Transistors

Comparative Investigation on the Repetitive Short-Circuit Capability of 100 V Commercial p-GaN Gate Power HEMTs With Different Processing and Structure

Temperature Dependences of Threshold Voltage and Drain-Induced Barrier Lowering in 60nm Gate Length MOS Transistors

Investigation of False Turn-On Behavior of Schottky P-Gan HEMT in Bridge-Leg Circuit over −55 °C - 150 °C Operating Temperature Range

Stability of GaN HEMT Device Under Static and Dynamic Gate Stress

Low-temperature characteristics and gate leakage mechanisms of LPCVD-SiN<i>x</i>/AlGaN/GaN MIS-HEMTs

An Extensive Negative Gate Bias Stress Degradation Mechanism in GaN MIS-HEMTs for Aerospace Applications