Abstract:GaN-based high electron mobility transistors (HEMTs) have exhibited great application prospects in power and radio frequency devices, thanks to the superior properties of GaN. Despite the significant commercialization progress, the reliability of GaN-based HEMTs remains a challenge. This work experimentally investigates the time-dependent degradation of Mg-doped GaN/AlN superlattice HEMTs under both OFF-state and SEMI-ON-state bias conditions and proposes that GaN/AlN superlattices as a barrier can solve the Vth instability issues of GaN HEMTs under OFF-state and SEMI-ON-state bias conditions. On the one hand, in the SEMI-ON-state, the hot electron effect leads to the degradation of Ig, gm,max, and Id,sat to varying degrees. However, the as-prepared GaN-based HEMTs exhibit excellent Vth stability (almost no change) under hot electron injection, on the account of the excellent two-dimensional electron gas confinement in the GaN/AlN superlattice structure. On the other hand, in the OFF-state, positive Vth shift (about 0.12 V) is induced by the hole emission in the GaN/AlN superlattice structure under reverse bias stress. In addition, the stress-induced destruction of MgO gate dielectric gives rise to the gate leakage, which increases by 2 orders of magnitude and triggers an irreversible degradation (about 10%) of the gm,max. These results are expected to provide a solution to the Vth instability of GaN HEMTs.

Buffer-Induced Time-Dependent OFF-State Leakage in AlGaN/GaN High Electron Mobility Transistors on Silicon

Buffer leakage induced pre-breakdown mechanism for AlGaN/GaN HEMTs on Si

Observation and Analysis of Anomalous V TH Shift of p-GaN Gate HEMTs Under off-State Drain Stress

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

Degradation Mechanisms of Mg-doped GaN/AlN Superlattices HEMTs under Electrical Stress

Off-state breakdown and leakage current transport analysis of AlGaN/GaN high electron mobility transistors.

Gate leakage current induced trapping in AlGaN/GaN Schottky-gate HFETs and MISHFETs

Bidirectional Threshold Voltage Shift and Gate Leakage in 650 V P-Gan AlGaN/GaN HEMTs: the Role of Electron-Trapping and Hole-Injection

Mechanism of Leakage Current Increase in P-Gan Gate AlGaN/GaN Power Devices Induced by ON-state Gate Bias

Analysis of Algan/Gan High Electron Mobility Transistors Failure Mechanism under Semi-On Dc Stress

Effect of Hole-Injection on Leakage Degradation in a &Lt;inline-Formula> &Lt;tex-Math Notation="latex">$p$ &Lt;/tex-Math> &Lt;/inline-Formula>-gan Gate AlGaN/GaN Power Transistor

Mechanism of Leakage of Ion-Implantation Isolated AlGaN/GaN MIS-high Electron Mobility Transistors on Si Substrate

Degradation of AlGaN/GaN Metal–insulator–semiconductor High Electron Mobility Transistors under Off-State Electrical Stress

Buffer trapping-induced R<inf>ON</inf> degradation in GaN-on-Si power transistors: Role of electron injection from Si substrate

Off-State Breakdown Characterization in AlGaN/GaN HEMT Using Drain Injection Technique

Threshold Voltage Improvement and Leakage Reduction of AlGaN/GaN HEMTs Using Dual-Layer SiNx Stressors

Study on the Electrical Degradation of AlGaN/GaN MIS-HEMTs Induced by Residual Stress of SiNx Passivation

Investigation of Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors Using a Soft Switched Pulsed \(I-V\) Measurement

Hole-Induced Threshold Voltage Shift Under Reverse-Bias Stress in E-Mode GaN MIS-FET

Analysis of abnormal threshold voltage shift induced by surface donor state in GaN HEMT on SiC substrate

Electrical Degradation of In Situ SiN/AlGaN/GaN MIS-HEMTs Caused by Dehydrogenation and Trap Effect Under Hot Carrier Stress