Abstract:The leakage current suppression mechanism in AlGaN/GaN High Electron Mobility Transistors (HEMTs) is investigated. It is known that leakage current can cause severe reliability problems for HEMT devices and conventional AlGaN/GaN HEMT devices suffer from detrimental off-state drain leakage current issues, especially under high off-state drain bias. Therefore, a leakage current suppression technique featuring hybrid-Schottky/ohmic-drain contact is discussed. Through the 2-zones leakage current suppression mechanism by the hybrid-Schottky/drain metal including the shielding effect of the rough ohmic-drain metal morphology and the drain side electric field modulation, AlGaN/GaN HEMT featuring this novel technique can significantly enhance the leakage current suppression capability and improve the breakdown voltage. An analytical method using loop-voltage-scanning is proposed to illustrate the optimization procedure of the hybrid-Schottky/ohmic drain metallization on leakage current suppression. Through the comparison of the loop leakage current hysteresis of conventional ohmic drain HEMT and hybrid-Schottky/ohmic drain, the leakage current suppression mechanism is verified through the leakage current considering surface acceptor-like trap charging/discharging model. Device featuring the hybrid-Schottky/ohmic drain technique shows an improvement in breakdown voltage from 450 V (with no Schottky drain metal) to 855 V with a total drift region length of 9 mu m, indicating enhanced off-state reliability characteristics for the AlGaN/GaN HEMT devices. (C) 2014 Elsevier Ltd. All rights reserved.

Buffer leakage induced pre-breakdown mechanism for AlGaN/GaN HEMTs on Si

Study of the Leakage Current Suppression for Hybrid-Schottky/ohmic Drain AlGaN/GaN HEMT

A Novel AlGaN/Si3N4 Compound Buffer Layer HEMT with Improved Breakdown Performances

Buffer-Induced Time-Dependent OFF-State Leakage in AlGaN/GaN High Electron Mobility Transistors on Silicon

Theoretical Analysis of Buffer Trapping Effects on Off-State Breakdown Between Gate and Drain in AlGaN/GaN HEMTs

Simulation Design of a High-Breakdown-voltage P-Gan-gate GaN HEMT with a Hybrid AlGaN Buffer Layer for Power Electronics Applications

Off-state breakdown and leakage current transport analysis of AlGaN/GaN high electron mobility transistors.

600-V P-Gan Gate HEMT with Buried Hole Spreading Channel Demonstrating Immunity Against Buffer Trapping Effects

Source-Drain Punch-Through Analysis of High Voltage Off-State AlGaN/GaN HEMT Breakdown

Suppressing Buffer-Induced Current Collapse in GaN HEMTs with a Source-Connected P-Gan (SCPG): A Simulation Study

Enhanced Breakdown Voltage and Dynamic Performance of GaN HEMTs with AlN/GaN Superlattice Buffer

Simulation of Trap State Effects in GaN DHFETs on Buffer Leakage Current and Breakdown Voltage

Breakdown voltage improvement of enhancement mode AlGaN/GaN HEMT by a novel step-etched GaN buffer structure

Novel High Voltage RESURF Al GaN/GaN HEMT with Charged Buffer Layer

Constructing drain surrounded double gate structure in AlGaN/GaN HEMT for boosting breakdown voltage

Improvement of Single Event Transient Effects for a Novel AlGaN/GaN High Electron-Mobility Transistor with a P-GaN Buried Layer and a Locally Doped Barrier Layer

Variable range hopping-assisted parasitic channel leakage in AlN/GaN/AlGaN HEMTs on Si

Analysis and simulation of bulk polarization mechanism in p-GaN HEMT with AI component gradient buffer layer

Influence of Deep-Level Traps on the Breakdown Characteristics of AlGaN/GaN High Electron Mobility Transistors

Asymmetric GaN High Electron Mobility Transistors Design with InAlN Barrier at Source Side and AlGaN Barrier at Drain Side

Improvement of Breakdown Characteristic for a Novel GaN HEMT with Enhanced Resistance Single-Event Transient Effect