Abstract:The leakage current suppression mechanism in AlGaN/GaN High Electron Mobility Transistors (HEMTs) is investigated. It is known that leakage current can cause severe reliability problems for HEMT devices and conventional AlGaN/GaN HEMT devices suffer from detrimental off-state drain leakage current issues, especially under high off-state drain bias. Therefore, a leakage current suppression technique featuring hybrid-Schottky/ohmic-drain contact is discussed. Through the 2-zones leakage current suppression mechanism by the hybrid-Schottky/drain metal including the shielding effect of the rough ohmic-drain metal morphology and the drain side electric field modulation, AlGaN/GaN HEMT featuring this novel technique can significantly enhance the leakage current suppression capability and improve the breakdown voltage. An analytical method using loop-voltage-scanning is proposed to illustrate the optimization procedure of the hybrid-Schottky/ohmic drain metallization on leakage current suppression. Through the comparison of the loop leakage current hysteresis of conventional ohmic drain HEMT and hybrid-Schottky/ohmic drain, the leakage current suppression mechanism is verified through the leakage current considering surface acceptor-like trap charging/discharging model. Device featuring the hybrid-Schottky/ohmic drain technique shows an improvement in breakdown voltage from 450 V (with no Schottky drain metal) to 855 V with a total drift region length of 9 mu m, indicating enhanced off-state reliability characteristics for the AlGaN/GaN HEMT devices. (C) 2014 Elsevier Ltd. All rights reserved.

Theoretical Analysis of Buffer Trapping Effects on Off-State Breakdown Between Gate and Drain in AlGaN/GaN HEMTs

Simulation of Trap State Effects in GaN DHFETs on Buffer Leakage Current and Breakdown Voltage

Buffer leakage induced pre-breakdown mechanism for AlGaN/GaN HEMTs on Si

Enhanced Breakdown Voltage and Dynamic Performance of GaN HEMTs with AlN/GaN Superlattice Buffer

Effects of the Trap Level in the Unintentionally Doped GaN Buffer Layer on Optimized P‐gan Gate AlGaN/GaN HEMTs

Breakdown Voltage Enhancement in GaN Channel and AlGaN Channel HEMTs Using Large Gate Metal Height

Off-state breakdown and leakage current transport analysis of AlGaN/GaN high electron mobility transistors.

Source-Drain Punch-Through Analysis of High Voltage Off-State AlGaN/GaN HEMT Breakdown

A Novel AlGaN/Si3N4 Compound Buffer Layer HEMT with Improved Breakdown Performances

Breakdown voltage improvement of enhancement mode AlGaN/GaN HEMT by a novel step-etched GaN buffer structure

Charge Trapping Related Channel Modulation Instability in P-GaN Gate HEMTs.

An Overview on Analyses and Suppression Methods of Trapping Effects in AlGaN/GaN HEMTs

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

Constructing drain surrounded double gate structure in AlGaN/GaN HEMT for boosting breakdown voltage

Suppressing Buffer-Induced Current Collapse in GaN HEMTs with a Source-Connected P-Gan (SCPG): A Simulation Study

Transconductance Overshoot, a New Trap-Related Effect in AlGaN/GaN HEMTs

Negative Transconductance Effect in P-Gan Gate AlGaN/GaN HEMTs by Traps in Unintentionally Doped GaN Buffer Layer*

Buffer-Induced Time-Dependent OFF-State Leakage in AlGaN/GaN High Electron Mobility Transistors on Silicon

Study of the Leakage Current Suppression for Hybrid-Schottky/ohmic Drain AlGaN/GaN HEMT

Buffer Traps Effect on GaN-on-Si High-Electron-Mobility Transistor at Different Substrate Voltages

600-V P-Gan Gate HEMT with Buried Hole Spreading Channel Demonstrating Immunity Against Buffer Trapping Effects