Abstract:An analytical model considering the buffer acceptor traps is presented in this paper to study the gate control capability in p-GaN gate AlGaN/GaN high-electron-mobility transistors (HEMTs). Through applying Gauss' law from the buffer layer to the two-dimensional-electron-gas (2DEG) channel in the GaN channel layer, the contributions of buffer acceptor trap concentration (N-A) and energy level (E-T) are obtained for calculating the gate voltage (V-G) dependent 2DEG density (n(S)) and threshold voltage (V-TH) performance. It is suggested that the deep E-T acceptor traps in the buffer layer are of great importance to the gate control capability. Plenty of the deep E-T acceptor traps could be ionized at the top region of the buffer layer. These ionized acceptor traps are negatively charged and electrostatically influence the 2DEG density, which is the role of deep E-T on gate control. Then, the n(S)-V-G and V-TH characteristics of the devices could be significantly modulated by the N-A. Furthermore, the influence of the shallow E-T acceptor traps is not strong and could be ignored in the prediction of the n(S)-V-G and V-TH distributions. This is due to the fact that few shallow E-T acceptor traps are ionized in the buffer layer. The analytical results are well supported by the calibrated TCAD simulation, revealing the impact mechanism of buffer acceptor traps on the device gate control capability and serving as more accurate guidance for designing the n(S)-V-G and V-TH in p-GaN gate AlGaN/GaN HEMTs.

Negative Transconductance Effect in P-Gan Gate AlGaN/GaN HEMTs by Traps in Unintentionally Doped GaN Buffer Layer*

Effects of the Trap Level in the Unintentionally Doped GaN Buffer Layer on Optimized P‐gan Gate AlGaN/GaN HEMTs

Transconductance Overshoot, a New Trap-Related Effect in AlGaN/GaN HEMTs

Study on transconductance non-linearity of AlGaN/GaN HEMTs considering acceptor-like traps in barrier layer under the gate

An analytical model on the gate control capability in p-GaN Gate AlGaN/GaN high-electron-mobility transistors considering buffer acceptor traps

Influence of Deep-Level Traps on the Breakdown Characteristics of AlGaN/GaN High Electron Mobility Transistors

Gate/Drain Coupled Barrier Lowering Effect and Negative Threshold Voltage Shift in Schottky-Type P-Gan Gate HEMT

An Overview on Analyses and Suppression Methods of Trapping Effects in AlGaN/GaN HEMTs

Evaluation of Trapping Behaviors in Forward Biased Schottky-Type p-GaN Gate HEMTs

Influence of the Interface Acceptor-Like Traps on the Transient Response of AlGaN/GaN HEMTs

TCAD-Based Investigation of the Electrical Characteristics of Normally off P-Gan Passivated GaN HEMTs

Positive and negative charge trapping GaN HEMTs: interplay between thermal emission and transport-limited processes

Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs

Negative Capacitance in Gan/Algan Heterojunction Dual-Band Detectors

Theoretical Analysis of Buffer Trapping Effects on Off-State Breakdown Between Gate and Drain in AlGaN/GaN HEMTs

Charge Trapping Related Channel Modulation Instability in P-GaN Gate HEMTs.

Suppression of Buffer Trapping Effect in GaN-on-Si Active-Passivation P-Gan Gate HEMT Via Light/Hole Pumping

Charge Storage Impact On Input Capacitance In P-Gan Gate Algan/Gan Power High-Electron-Mobility Transistors

Study of Interface Traps in AlGaN/GaN MISHEMTs Using LPCVD SiNx As Gate Dielectric

Study on the Charging Current of Surface Traps in AlGaN/GaN High Electron Mobility Transistors with a Slot Gate Structure

Impact of Interface Traps on Switching Behavior of Normally‐off AlGaN/GaN MOS‐HEMTs