Abstract:Herein, a metal/insulator/p-GaN gate HEMT (MIP-HEMT) with Si3N4 gate dielectric layer is fabricated. Compared to the conventional p-GaN HEMT, the MIP-HEMT has a higher threshold voltage (Vth) of 4.8 V and better gate leakage suppression. The mechanism of threshold voltage increase in MIP-HEMT is elucidated through an analysis of the electric field distribution in the gate region and the proposed gate capacitance model. Furthermore, MIP-HEMTs with gate dielectric layers of varying dielectric constants and thicknesses are designed and simulated. The obtained results lead to the derivation of an empirical formula for the threshold voltage of the MIP-HEMT under ideal dielectric/p-GaN interface conditions, in relation to the dielectric constant and thickness of the gate dielectric layer. Additionally, simulations are conducted on the MIP-HEMT incorporating fixed charges at the dielectric/p-GaN interface, and the impact of interface charges is investigated. This refinement enables a more accurate prediction of the MIP-HEMT's threshold voltage. Conclusively, MIP-HEMTs can effectively modulate the threshold voltage by manipulating the parameters of the gate dielectric layer, thereby extending the threshold voltage range of conventional enhancement-mode devices. The fabricated metal/insulator/p-GaN gate HEMT exhibits a noteworthy threshold voltage (Vth) of 4.8 V and effective gate leakage suppression. Analysis reveals the mechanism by which the gate dielectric layer enhances the Vth. Relationships are established between the Vth at an ideal dielectric/p-GaN interface and the dielectric layer's permittivity and thickness. The impact of interface charge on Vth is investigated.image (c) 2024 WILEY-VCH GmbH

Roles of Hole Trap on Gate Leakage of p -GaN HEMTs at Cryogenic Temperatures

Degradation Mechanisms of Gate Leakage in GaN-Based HEMTs at Low Dose Rate Irradiation

Low-temperature characteristics and gate leakage mechanisms of LPCVD-SiN<i>x</i>/AlGaN/GaN MIS-HEMTs

Gate Current Transport in Enhancement-Mode P-N Junction/AlGaN/GaN (PNJ) HEMT

Identification of Trap States in P-Gan Layer of a P-Gan/algan/gan Power HEMT Structure by Deep-Level Transient Spectroscopy

Effects of the Trap Level in the Unintentionally Doped GaN Buffer Layer on Optimized P‐gan Gate AlGaN/GaN HEMTs

Evaluation of Trapping Behaviors in Forward Biased Schottky-Type p-GaN Gate HEMTs

Temperature-Dependent Dynamic Performance of p-GaN Gate HEMT on Si

Surface Acceptor-Like Trap Model for Gate Leakage Current Degradation in Lattice-Matched Inaln/Gan Hemts

Negative Transconductance Effect in P-Gan Gate AlGaN/GaN HEMTs by Traps in Unintentionally Doped GaN Buffer Layer*

Low-Temperature Accelerated Gate Reliability of Schottky-type p-GaN Gate HEMTs

Gate/Drain Coupled Barrier Lowering Effect and Negative Threshold Voltage Shift in Schottky-Type P-Gan Gate HEMT

Study of minority carrier traps in p-GaN gate HEMT by optical deep level transient spectroscopy

Analysis and modeling of the influence of gate leakage current on threshold voltage and subthreshold swing in p-GaN gate AlGaN/GaN high electron mobility transistors

Insight into the suppression mechanism of bulk traps in Al2O3 gate dielectric and its effect on threshold voltage instability in Al2O3/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors

Unclamped-Inductive-Switching Behaviors of p-GaN HEMTs at Cryogenic Temperature

Characterization and analysis of low-temperature time-to-failure behavior in forward-biased Schottky-type <i>p</i>-GaN gate HEMTs

Study on transconductance non-linearity of AlGaN/GaN HEMTs considering acceptor-like traps in barrier layer under the gate

An Overview on Analyses and Suppression Methods of Trapping Effects in AlGaN/GaN HEMTs

Influence of the Interface Acceptor-Like Traps on the Transient Response of AlGaN/GaN HEMTs

Threshold Voltage Modulation and Gate Leakage Suppression of Enhancement-Mode GaN HEMT by Metal/Insulator/p-GaN Gate Structure