Abstract:In this Letter, trapping effects of a Schottky lightly Mg-doped p-GaN gate stack for low-power applications have been investigated, and further analysis focusing on AlGaN/GaN interface traps under γ-ray irradiation has been carried out. A negligible shift in the flatband voltage with γ-ray irradiation dose up to 800 krad indicates the superior radiation tolerance of the p-GaN gate structure. The difference between capacitance dispersion at the measurement frequency below and above 500 kHz is observed, which is attributed to trapping effects in different locations with varying gate voltage. Moreover, the frequency-dependent conductance method is put forward to assess the effects of different doses of γ-ray irradiation on the AlGaN/GaN interface traps. Based on that method, aside from the shallow trap states [the trap activation energy (ET) is about 0.334–0.338 eV] previously found in the traditional normally on high electron mobility transistor (HEMT), another type of deeper trap states at the AlGaN/GaN interface (ET is about 0.467–0.485 eV) is detected. It is observed that the ET of shallow trap states distributes at a deeper and broader range as the irradiation dose increases. Additionally, the trap density decreased after 600 krad doses irradiation but increased after 800 krad doses irradiation for both deep and shallow ET. Transmission electron microscopy and atomic force microscopy are used to demonstrate the smooth AlGaN/GaN interface morphology, which will not be greatly damaged after 800 krad doses of γ-ray irradiation. This work can provide a further understanding of radiation tolerance and trapping effects of p-GaN gate HEMTs for low-voltage applications.

Identification of Trap States in P-Gan Layer of a P-Gan/algan/gan Power HEMT Structure by Deep-Level Transient Spectroscopy

Study of minority carrier traps in p-GaN gate HEMT by optical deep level transient spectroscopy

Evaluation of Trapping Behaviors in Forward Biased Schottky-Type p-GaN Gate HEMTs

Effects of the Trap Level in the Unintentionally Doped GaN Buffer Layer on Optimized P‐gan Gate AlGaN/GaN HEMTs

A Trap Characterization System for GaN HEMTs Based on Transient Drain Voltage

An Overview on Analyses and Suppression Methods of Trapping Effects in AlGaN/GaN HEMTs

Investigation of Carrier Compensation Traps in N−-Gan Drift Layer by High-Temperature Deep-Level Transient Spectroscopy

Roles of Hole Trap on Gate Leakage of p -GaN HEMTs at Cryogenic Temperatures

Investigation of Trapping Effects in Schottky Lightly Doped P-GaN Gate Stack under Γ-Ray Irradiation

Investigation of Traps in HVPE Grown β-Ga2O3 Epilayers/n+-Ga2O3 using Deep Level Transient Spectroscopy

Dynamic Interplays of Gate Junctions in Schottky-type P-Gan Gate Power HEMTs During Switching Operation

Negative Transconductance Effect in P-Gan Gate AlGaN/GaN HEMTs by Traps in Unintentionally Doped GaN Buffer Layer*

Emission and capture characteristics of deep hole trap in n-GaN by optical deep level transient spectroscopy

Dynamic Threshold Voltage in $P$-Gan Gate HEMT

Spatial Identification Of Traps In Algan/Gan Heterostructures By The Combination Of Lateral And Vertical Electrical Stress Measurements

Influence of the Interface Acceptor-Like Traps on the Transient Response of AlGaN/GaN HEMTs

Identification of Semi-ON-State Current Collapse in AlGaN/GaN HEMTs by Drain Current Deep Level Transient Spectroscopy

Charge Trapping Related Channel Modulation Instability in P-GaN Gate HEMTs.

Virtual-Body P-Gan Gate HEMT with Enhanced Ruggedness Against Hot-Electron-Induced Degradation

Analysis of Semi-Insulating Carbon-Doped GaN Layers Using Deep-Level Transient Spectroscopy

An Electric-Opto Combined Measurement Method for Identifying Filled Traps in the Off-State of HEMTs with High Spatial Resolution