Abstract:Detailed investigation of deep traps in HVPE-grown β-Ga2O3 epilayers has been done by performing deep-level transient spectroscopy (DLTS) from 200 K to 500 K on Pt/β-Ga2O3 and Ni/β-Ga2O3 Schottky diodes. Similar results were obtained with a fill pulse width of 100 milliseconds irrespective of different Schottky metal contacts and epilayers. Two electron traps at E2 (EC–ET =0.65 eV) and E3 (EC–ET =0.68 – 0.70 eV) with effective capture cross-sections of 4.10 × 10-14 cm2 and 5.75 × 10-15 cm2 above 300 K have been observed. Below 300 K, a deep trap with a negative DLTS signal peak was also observed at E1 (EC–ET = 0.34 – 0.35 eV) with very low capture cross-section of 3.28 × 10-17 cm2. For a short pulse width of 100 μs, only two electron traps E2 and E3 at energies of 0.72 eV, and = 0.73 eV were observed, and one order of higher corresponding effective capture cross-sections. All traps are found to be unaffected by the electric field during the field-dependence DLTS study. From the filling-pulse width dependence DLTS study, the decrease in capacitance transient amplitude with increasing pulse width has been observed opposite to the capture barrier kinetics of the traps and attributed to the emission of carriers during the capture process. Trap concentrations were found high at the interface from depth profiling DLTS. Based on the available literature, it is suggested that these traps are related to FeGa, Fe-related centers, and complexes with hydrogen or shallow donors and might be affected or generated during the metallization by the E-beam evaporator and the CMP polishing.

Study of minority carrier traps in p-GaN gate HEMT by optical deep level transient spectroscopy

Emission and capture characteristics of deep hole trap in n-GaN by optical deep level transient spectroscopy

Evaluation of Trapping Behaviors in Forward Biased Schottky-Type p-GaN Gate HEMTs

Identification of Trap States in P-Gan Layer of a P-Gan/algan/gan Power HEMT Structure by Deep-Level Transient Spectroscopy

Observation of minority-carrier traps in InGaN∕GaN multiple-quantum-well light-emitting diodes during deep-level transient spectroscopy measurements

Investigation of Traps in HVPE Grown β-Ga2O3 Epilayers/n+-Ga2O3 using Deep Level Transient Spectroscopy

Roles of Hole Trap on Gate Leakage of p -GaN HEMTs at Cryogenic Temperatures

Study of Interface Traps in AlGaN/GaN MISHEMTs Using LPCVD SiNx As Gate Dielectric

Positive and negative charge trapping GaN HEMTs: interplay between thermal emission and transport-limited processes

Rapid Detection of Capture and Emission Processes in Surface and Buffer Traps: Understanding Dynamic Degradation in GaN Power Devices

Study on the Charging Current of Surface Traps in AlGaN/GaN High Electron Mobility Transistors with a Slot Gate Structure

Effects of the Trap Level in the Unintentionally Doped GaN Buffer Layer on Optimized P‐gan Gate AlGaN/GaN HEMTs

Deep Level Investigation of INGAAS on INP Layer

A Trap Characterization System for GaN HEMTs Based on Transient Drain Voltage

Evolution of Activation Energy of Interface Traps in LPNP Transistors Characterized by Deep-Level Transient Spectroscopy

Negative Transconductance Effect in P-Gan Gate AlGaN/GaN HEMTs by Traps in Unintentionally Doped GaN Buffer Layer*

Charge Trapping Related Channel Modulation Instability in P-GaN Gate HEMTs.

An Overview on Analyses and Suppression Methods of Trapping Effects in AlGaN/GaN HEMTs

Interface Trap Effect on the n-Channel GaN Schottky Barrier-Metal-Oxide Semiconductor Field-Effect Transistor for Ultraviolet Optoelectronic Integration

An Electric-Opto Combined Measurement Method for Identifying Filled Traps in the Off-State of HEMTs with High Spatial Resolution

Spatially-resolved Spectroscopic Measurements of Ec − 0.57 Ev Traps in AlGaN/GaN High Electron Mobility Transistors