Abstract:Ultraviolet (UV) photodetectors are key devices required in the industrial, military, space, environmental, and biological fields. The Schottky barrier (SB)-MOSFET, with its high hole and electron barrier, and given its extremely low dark current, has broad development prospects in the optoelectronics field. We analyze the effects of trap states on the output characteristics of an inversion mode n-channel GaN SB-MOSFET using TCAD simulations. At the oxide/GaN interface below the gate, it was demonstrated that shallow donor-like traps were responsible for degrading the subthreshold swing (SS) and off-state current density (Ioff), while deep donor-like traps below the Fermi energy level were insignificant. In addition, shallow acceptor-like traps shifted the threshold voltage (Vt) positively and deteriorated the SS and on-state current density (Ion), while deep acceptor-like traps acted on a fixed charge. The output characteristics of the GaN SB-MOSFET were related to the resistive GaN path and the tunneling rate due to the traps at the metal (source, drain)/GaN interface. For the UV responses, the main mechanism for the negative Vt shift and the increases in the Ion and spectral responsivity was related to the photo-gating effect caused by light-generated holes trapped in the shallow trap states. These results will provide insights for UV detection technology and for a high-performance monolithic integration of the GaN SB-MOSFET.

Investigation of Switching Kinetics of Interface Traps in Metal-Oxide-Semiconductor-Field-Effect-Transistors with Ultra-narrow Channels

Switching Kinetics of Interface States in Deep Submicrometre Soi N-Mosfets

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

Quantitative Evaluation of Slow Traps Near Ge Mos Interfaces by Using Time Response of Mos Capacitance

On-The-Fly Interface Trap Measurement And Its Impact On The Understanding Of Nbti Mechanism For P-Mosfets With Sion Gate Dielectric

Traps Around Ge Schottky Junction Interface: Quantitative Characterization and Impact on the Electrical Properties of Ge MOS Devices

Anomalous Random Telegraph Noise in Nanoscale Transistors As Direct Evidence of Two Metastable States of Oxide Traps

Investigation of Traps at MoS2/Al2O3Interface in Nmosfets by Low-Frequency Noise

Investigation of Extra Traps Measured by Charge Pumping Technique in High Voltage Zone in P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Hfo2/Metal Gate Stacks

Trap Characterization of Trench-Gate SiC MOSFETs Based on Transient Drain Current

A Comparative Study on the Impacts of Interface Traps on Tunneling Fet and Mosfet

Reliability investigation of high-k/metal gate in nMOSFETs by three-dimensional kinetic Monte-Carlo simulation with multiple trap interactions

Interface and Border Traps in the Gate Stack of Carbon Nanotube Film Transistors with an Yttria Dielectric

Interface Trap Effect on the n-Channel GaN Schottky Barrier-Metal-Oxide Semiconductor Field-Effect Transistor for Ultraviolet Optoelectronic Integration

Charge Trapping At The Mos2-Sio2 Interface And Its Effects On The Characteristics Of Mos2 Metal-Oxide-Semiconductor Field Effect Transistors

Trap kinetics in metal-oxide-semiconductor structures at high electric field

Study of the Influence of Different Gate Oxide Traps on Threshold Voltage Drift of SiC MOSFET Based on Transient Current

Gate tunneling currents in ultrathin oxide metal–oxide–silicon transistors

Random Telegraph Signals And Low-Frequency Noise In N-Metal-Oxide-Semiconductor Field-Effect Transistors With Ultranarrow Channels

New Insights into Oxide Traps Characterization in Gate-All-around Nanowire Transistors with TiN Metal Gates Based on Combined Ig-Id RTS Technique

Degradation Investigation of High-k/Metal Gate Nmosfets by 3D KMC with Multiple Traps Interactions