Abstract:Carbon nanotube field-effect transistors (CNTFETs) have been considered a strong candidate for post-Si era electronics due to the virtues of higher speed, lower power consumption, and multiple functionalities. The interface analysis based on the top gate structure has made little progress and lacks a reliable charge trap characterization model suitable for carbon tube devices. Quantitative extraction and analysis of the interface state are crucial for the integration of top-gate devices. Herein, a 5 nm thick Y2O3 thin film was selected as the gate dielectric layer in the top-gate CNTFETs device, and a post-annealing process in air ambience was utilized to optimize the Y2O3-CNT interface. A series of device performance evaluation results indicated that the post-annealing process in air ambience can effectively improve the on-state current and reduce the threshold voltage and subthreshold swing of the device, which are derived from diffusion of oxygen atom in the Y2O3 layer and optimization of the interface of Y2O3-CNT. Specifically, the maximum mobility, subthreshold swing, and threshold voltage are calculated to be 29 cm2/V s, 103 mV/dec, and −0.1 V, respectively, and the interface state density is reduced from 2.68 × 1012 to 1.51 × 1012 cm−2 in the gate insulator. These results not only are important to understand the dielectric impact on CNTFET devices but also are useful for future materials’ development and device optimization for high-performance CNT-based electronics.

Interface and Border Traps in the Gate Stack of Carbon Nanotube Film Transistors with an Yttria Dielectric

Interface States in Gate Stack of Carbon Nanotube Array Transistors.

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

Improving the Performance of Aligned Carbon Nanotube-Based Transistors by Refreshing the Substrate Surface.

Carbon Nanotube Network Film-Based Field-Effect Transistor Interface State Optimization by Ambient Air Annealing

Lowering Interface State Density in Carbon Nanotube Thin Film Transistors Through Using Stacked Y2O3/HfO2 Gate Dielectric

On-The-Fly Interface Trap Measurement And Its Impact On The Understanding Of Nbti Mechanism For P-Mosfets With Sion Gate Dielectric

Exploration of yttria films as gate dielectrics in sub-50 nm carbon nanotube field-effect transistors.

Characterization of Interface and Bulk Traps in Ultrathin Atomic Layer-Deposited Oxide Semiconductor MOS Capacitors With HfO2/In2O3 Gate Stack by C-V and Conductance Method

Quantitative Evaluation of Slow Traps Near Ge Mos Interfaces by Using Time Response of Mos Capacitance

Coaxial boron nitride nanotubes as interfacial dielectric layers to lower interface trap density in carbon nanotube transistors

Electron trapping at SiO2/4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis

Effect of Interface and Bulk Traps on Thec–vcharacterization of a LPCVD-SiNx/AlGaN/GaN Metal-Insulator-semiconductor Structure

On Gate Capacitance Of Nanotube Networks

Band alignment and charge transfer mechanisms in the prediction of advanced gate dielectrics for carbon nanotube field-effect transistors

High-Performance Carbon-Nanotube-Based Complementary Field-Effect-Transistors And Integrated Circuits With Yttrium Oxide

Gate Capacitance Coupling of Double-Gate Carbon Nanotube Network Transistors

Self-aligned U-gate Carbon Nanotube Field-Effect Transistor with Extremely Small Parasitic Capacitance and Drain-Induced Barrier Lowering.

Relaxation kinetics of interface states and bulk traps in atomic layer deposited ZrO2/ β -Ga2O3 metal-oxide-semiconductor capacitors

Interface/Border Trap Characterization Of Al2o3/Aln/Gan Metal-Oxide-Semiconductor Structures With An Aln Interfacial Layer

Interface Optimization and Transport Modulation of Sm2O3/InP Metal Oxide Semiconductor Capacitors with Atomic Layer Deposition-Derived Laminated Interlayer