Abstract:Carbon nanotube field-effect transistors (CNTFETs) have been considered a strong candidate for post-Si era electronics due to the virtues of higher speed, lower power consumption, and multiple functionalities. The interface analysis based on the top gate structure has made little progress and lacks a reliable charge trap characterization model suitable for carbon tube devices. Quantitative extraction and analysis of the interface state are crucial for the integration of top-gate devices. Herein, a 5 nm thick Y2O3 thin film was selected as the gate dielectric layer in the top-gate CNTFETs device, and a post-annealing process in air ambience was utilized to optimize the Y2O3-CNT interface. A series of device performance evaluation results indicated that the post-annealing process in air ambience can effectively improve the on-state current and reduce the threshold voltage and subthreshold swing of the device, which are derived from diffusion of oxygen atom in the Y2O3 layer and optimization of the interface of Y2O3-CNT. Specifically, the maximum mobility, subthreshold swing, and threshold voltage are calculated to be 29 cm2/V s, 103 mV/dec, and −0.1 V, respectively, and the interface state density is reduced from 2.68 × 1012 to 1.51 × 1012 cm−2 in the gate insulator. These results not only are important to understand the dielectric impact on CNTFET devices but also are useful for future materials’ development and device optimization for high-performance CNT-based electronics.

Exploration of yttria films as gate dielectrics in sub-50 nm carbon nanotube field-effect transistors.

Lowering Interface State Density in Carbon Nanotube Thin Film Transistors Through Using Stacked Y2O3/HfO2 Gate Dielectric

Interface States in Gate Stack of Carbon Nanotube Array Transistors.

Improving the Performance of Aligned Carbon Nanotube-Based Transistors by Refreshing the Substrate Surface.

Electrothermal Characterization of Carbon Nanotube Field Effect Transistors (Cntfets)

Interface and Border Traps in the Gate Stack of Carbon Nanotube Film Transistors with an Yttria Dielectric

Investigation on self-heating effect in carbon nanotube field-effect transistors

Growth and Performance of Yttrium Oxide as an Ideal High-κ Gate Dielectric for Carbon-Based Electronics

Growth and performance of yttrium oxide as an ideal high-kappa gate dielectric for carbon-based electronics.

High-Performance Carbon-Nanotube-Based Complementary Field-Effect-Transistors And Integrated Circuits With Yttrium Oxide

Y-contacted high-performance n-type single-walled carbon nanotube field-effect transistors: scaling and comparison with Sc-contacted devices.

Carbon Nanotube Network Film-Based Field-Effect Transistor Interface State Optimization by Ambient Air Annealing

Top gate medium for carbon-based field-effect transistors, and preparation method thereof

Improving Subthreshold Swing to Thermionic Emission Limit in Carbon Nanotube Network Film-Based Field-Effect

Band alignment and charge transfer mechanisms in the prediction of advanced gate dielectrics for carbon nanotube field-effect transistors

Exploration of Vertical Scaling Limit in Carbon Nanotube Transistors

Self-aligned U-gate Carbon Nanotube Field-Effect Transistor with Extremely Small Parasitic Capacitance and Drain-Induced Barrier Lowering.

Improvement of N-type carbon nanotube field effect transistor performance using the combination of yttrium diffusion layer in HfO2dielectrics and metal contacts

Coaxial boron nitride nanotubes as interfacial dielectric layers to lower interface trap density in carbon nanotube transistors

Improvement of N-type carbon nanotube field effect transistor performance using the combination of yttrium diffusion layer in HfO2 dielectrics and metal contacts

Low-Temperature Behavior of Single-Wall Carbon Nanotube Gate-all-Around Field-Effect Transistors