Abstract:Quasi-one-dimensional semiconducting materials have attracted increasing attention due to their excellent ability to downscale the size of transistors. However, in quasi-one-dimensional nanowire (NW) transistors, their surface and interface properties play a very important role mainly due to the large surface-to-volume ratio of NWs and surface scattering, which degrade their carrier mobility. Herein, we developed a new method to cover the channel surface of InAs NW field effect transistors (FETs) with Y2O3/HfO2 layers to improve their electrical properties. We successfully fabricated nine FETs and measured their electrical properties, which improve after depositing the Y2O3/HfO2 layers, including an increase in on-state current, decrease in off-state current, increase in transconductance, increase in electron mobility and decrease in subthreshold swing. By comparing the properties of Y2O3/HfO2-covered devices with that of the FETs fabricated without the Y2O3 covering or without annealing, we prove that it is the combined Y2O3/HfO2 layers instead of only the Y2O3 or HfO2 layer that improve the electrical properties of the FETs. The Cs-corrected high-resolution scanning transmission electron microscopy study demonstrates that Y can actually diffuse through the native oxide layer (confirmed to be InOx) and reach the surface of the InAs NWs. Our results indicate that the desirable characteristics of Y2O3 and the surface passivation by HfO2 improve the electrical properties of the InAs NW FETs, in which Y2O3 plays an important role to modify and stabilize the interface between the InAs NWs and the outside dielectric layer. Furthermore, this method should also be applicable to other III-V materials.

Improvement of N-type carbon nanotube field effect transistor performance using the combination of yttrium diffusion layer in HfO2 dielectrics and metal contacts

Improving the Performance of Aligned Carbon Nanotube-Based Transistors by Refreshing the Substrate Surface.

Hf-Contacted High-Performance Air-Stable N-Type Carbon Nanotube Transistors

Electrothermal Characterization of Carbon Nanotube Field Effect Transistors (Cntfets)

Modeling and performance characterization of double-walled carbon nanotube array field-effect transistors

High-Performance Carbon-Nanotube-Based Complementary Field-Effect-Transistors And Integrated Circuits With Yttrium Oxide

Direct Growth of Horizontally Aligned Carbon Nanotubes Between Electrodes and Its Application to Field-Effect Transistors

Contact Engineering and Channel Doping for Robust Carbon Nanotube NFETs

Improving Carbon Nanotube-Based Radiofrequency Field-Effect Transistors by the Device Architecture and Doping Process.

Improving The Electrical Properties Of Inas Nanowire Field Effect Transistors By Covering Them With Y2o3/Hfo2 Layers

Fabrication of Nitrogen-doped Multi-walled Carbon Nanotube and Their Field Effect Transistor Properties

High performance n-type carbon nanotube field-effect transistors with chemically doped contacts

Lowering Interface State Density in Carbon Nanotube Thin Film Transistors Through Using Stacked Y2O3/HfO2 Gate Dielectric

High-Performance Complementary Transistors and Medium-Scale Integrated Circuits Based on Carbon Nanotube Thin Films.

Improving Subthreshold Swing to Thermionic Emission Limit in Carbon Nanotube Network Film-Based Field-Effect

Air-stable n-type transistors based on assembled aligned carbon nanotube arrays and their application in complementary metal-oxide-semiconductor electronics

Carbon Nanotube Electronics: Recent Advances

Y-contacted high-performance n-type single-walled carbon nanotube field-effect transistors: scaling and comparison with Sc-contacted devices.

Investigation of Light Doping and Hetero Gate Dielectric Carbon Nanotube Tunneling Field-Effect Transistor for Improved Device and Circuit-Level Performance

Enhancement‐Mode Field‐Effect Transistors and High‐Speed Integrated Circuits Based on Aligned Carbon Nanotube Films

Scaling of N-Type Field-Effect Transistors Based on Aligned Carbon Nanotube Arrays