Abstract:High-density semiconducting aligned carbon nanotube (A-CNT) arrays have been demonstrated with wafer-scale preparation of materials and have shown high performance in P-type field-effect transistors (FETs) and great potential for applications in future digital integrated circuits (ICs). However, high-performance N-type FETs (N-FETs) have not yet been implemented with A-CNTs, making development of complementary metal-oxide-semiconductor (CMOS) technology, a necessary component for modern digital ICs, impossible. In this work, we reveal the mechanism hindering the realization of A-CNT N-FETs contacted by low-work-function metals and develop corresponding solutions to promote the performance of N-FETs to that of P-type FETs (P-FETs). The fabricated scandium (Sc)-contacted A-CNT N-FET with a 100 nm gate length exhibits an on-state current (Ion) of 800 μA/μm and a peak transconductance (gm) of 250 μS/μm, representing the highest performance of CNT-based N-FETs to date. Moreover, CMOS technology has been developed to realize N- and P-FETs with symmetric high performance based on A-CNTs. The fabricated A-CNT CMOS FETs show electron and hole mobilities of 325 and 241 cm2 V-1 s-1, respectively, which are slightly higher than the corresponding values of Si CMOS transistors. Our scalable fabrication of A-CNT CMOS FETs with comparable electronic performance to Si CMOS will promote the application of CNT-based electronics in digital ICs.

Hf-Contacted High-Performance Air-Stable N-Type Carbon Nanotube Transistors

Electrothermal Characterization of Carbon Nanotube Field Effect Transistors (Cntfets)

High performance n-type carbon nanotube field-effect transistors with chemically doped contacts

Fabrication of air-stable n-type carbon nanotube thin-film transistors on flexible substrates using bilayer dielectrics

Unipolar P-Type Single-Walled Carbon Nanotube Field-Effect Transistors Using TTF–TCNQ As the Contact Material

Improvement of N-type carbon nanotube field effect transistor performance using the combination of yttrium diffusion layer in HfO2 dielectrics and metal contacts

Improvement of N-type carbon nanotube field effect transistor performance using the combination of yttrium diffusion layer in HfO2dielectrics and metal contacts

Air-stable n-type transistors based on assembled aligned carbon nanotube arrays and their application in complementary metal-oxide-semiconductor electronics

Reliability Tests and Improvements for Sc-Contacted N-Type Carbon Nanotube Transistors

Coaxial p- and n-type carbon nanotube transistors with dopant-selective coatings

Carbon nanotube field-effect transistors with integrated ohmic contacts and high-κ gate dielectrics

Carbon Nanotube Field Effect Transistors Based on Schottky Contact

High-performance Doping-Free Carbon-Nanotube-based CMOS Devices and Integrated Circuits

High-Performance, Hysteresis-Free Carbon Nanotube Field-Effect Transistors Via Directed Assembly

Adjustable Hydrazine Modulation of Single-Wall Carbon Nanotube Network Field Effect Transistors from P-Type to N-Type

Y-contacted high-performance n-type single-walled carbon nanotube field-effect transistors: scaling and comparison with Sc-contacted devices.

High-Performance, Hysteresis-Free Carbon Nanotube FETs via Directed Assembly

Complementary Transistors Based on Aligned Semiconducting Carbon Nanotube Arrays

Highly uniform and stable n-type carbon nanotube transistors by using positively charged silicon nitride thin films

Self-aligned ballistic n-type single-walled carbon nanotube field-effect transistors with adjustable threshold voltage.

Scaling of N-Type Field-Effect Transistors Based on Aligned Carbon Nanotube Arrays