Abstract:Near ballistic n-type single-walled carbon nanotube field-effect transistors (SWCNT FETs) have been fabricated with a novel self-aligned gate structure and a channel length of about 120 nm on a SWCNT with a diameter of 1.5 nm. The device shows excellent on- and off-state performance, including high transconductance of up to 25 mu S, small subthreshold swing of 100 mV/dec, and gate delay time of 0.86 ps, suggesting that the device can potentially work at THz regime. Quantitative analysis on the electrical characteristics of a long channel device fabricated on the same SWCNT reveals that the SWCNT has a mean-free-path of 191 nm, and the electron mobility of the device reaches 4650 cm(2)/Vs. When benchmarked by the metric CV/I vs I-on/I-off, the n-type SWCNT FETs show significantly better off-state leakage than that of the Si-based n-type FETs with similar channel length. An important advantage of this self-aligned gate structure is that any suitable gate materials can be used, and in particular it is shown that the threshold voltage of the self-aligned n-type FETs can be adjusted by selecting gate metals with different work functions.

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Transformation of unipolar single-walled carbon nanotube field effect transistors to ambipolar induced by polystyrene nanosphere assembly.

High performance n-type carbon nanotube field-effect transistors with chemically doped contacts

Carbon Nanotube Lateral Field Emission Device with Embedded Field Effect Transistor

Nanotube and Nanowire Transistors

Carbon nanotube field-effect transistors with integrated ohmic contacts and high-κ gate dielectrics

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Poly(3,3‴-didodecylquarterthiophene) Field Effect Transistors with Single-Walled Carbon Nanotube Based Source and Drain Electrodes

Field-effect Transistors with Multiple Channels Constructed by Carbon Nanotubes

Coaxial p- and n-type carbon nanotube transistors with dopant-selective coatings

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Semiconductor-enriched single wall carbon nanotube networks applied to field effect transistors

Self-aligned ballistic n-type single-walled carbon nanotube field-effect transistors with adjustable threshold voltage.

Miniature organic transistors with carbon nanotubes as quasi-one-dimensional electrodes

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Integrating carbon nanotubes into silicon by means of vertical carbon nanotube field-effect transistors.

Study on the Field-Effect Transistor Based on Pd/SWNT/Al Configuration

Carbon Nanotube Multi-Channeled Field-Effect Transistors.

Miniature Organic Transistors With Carbon Nanotubes as Quasi-One Dimensional Electrodes