Abstract:Controlled synthesis of carbon nanotubes (CNTs) and assembling them into macroscopic structures are of great importance to the applications of carbon nanotubes, and a deep understanding of the growth mechanism of carbon nanotubes would be an indispensable prerequisite for well-defined synthesis in a controllable way. Here we show some of our recent progress in carbon nanotube's growth mechanism, controlled synthesis, and applications. By introducing a ~ 13C labeling method, we revealed that the growth mechanism of the carbon nanotubes made by chemical vapor deposition (CVD) is the “extrusion model”. Serials of labels can be embedded into CNTs by tuning the composition and the flow rate of the reactive gases during the growth process, and the growth rate of CNT arrays can be calculated thereby. The fabrication of super\|aligned CNT arrays was expanded to 4-inch wafer scale. A novel method was invented to process the raw yarn by passing through volatile organic solvents. As a result, both the strength and manipulability were improved substantially. The processed yarn can be applied as thermal electron sources, large current density field emitters and in fluorescent tubes etc. Thermal interface materials (TIMs) has significant importance in IT industry, we prepared CNT array-polymer matrix which has very high thermal conductivity and extremely low thermal resistance. Techniques like chemical modification, tip etching and surface metal layer were explored to enhance the thermal conductivity of the CNT thermal interface materials.

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Carbon Nanotube Lateral Field Emission Device with Embedded Field Effect Transistor

Carbon Nanotube Technology For Solid State And Vacuum Electronics

Carbon Nanotube Electronics: Recent Advances

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Transformation of unipolar single-walled carbon nanotube field effect transistors to ambipolar induced by polystyrene nanosphere assembly.

Advances and Frontiers in Single‐Walled Carbon Nanotube Electronics

Field-Effect Transistors Based on Single-Wall Carbon Nanotubes Bundles

Low-Temperature, Directly Depositing Individual Single-Walled Carbon Nanotubes for Fabrication of Suspended Nanotube Devices

High-Performance, Hysteresis-Free Carbon Nanotube FETs via Directed Assembly

Self-aligned ballistic n-type single-walled carbon nanotube field-effect transistors with adjustable threshold voltage.

Unipolar P-Type Single-Walled Carbon Nanotube Field-Effect Transistors Using TTF–TCNQ As the Contact Material

Progress on a Carbon Nanotube Field-Effect Transistor Integrated Circuit: State of the Art, Challenges, and Evolution

Controlled Preparation of Single-Walled Carbon Nanotubes as Materials for Electronics

Explorations on growth mechanism, controlled synthesis and applications of carbon nanotubes

High performance n-type carbon nanotube field-effect transistors with chemically doped contacts

Controlled Growth, Patterning and Placement of Carbon Nanotube Thin Films