Abstract:Being free from the harsh post-growth treatments in strong acids, long time sonication, etc., directly grown single-walled carbon nanotubes (SWCNTs) preserve their pristine structures and intrinsic properties, which make them ideal for highperformance electronic devices.[1–9] Integration of directly grown SWCNTs into such addressable devices is a crucial step and requirement for both fundamental studies and applications. Two strategies, ie, fabrication of metal electrodes on CNTs [5, 7, 10] and direct growth of CNTs between the pre-fabricated electrodes,[3, 4, 11] are normally used to fabricate the directly grown CNT-based devices. Although the first strategy is popular and commonly used, the shadow mask and/or the use of photoresist may contaminate or destroy CNTs, leading to a low performance or even failure of devices.[3] The second strategy possesses some advantages, such as no CNT purification and no photolithography required. This could be a better choice to produce clean and high-performance CNT-based devices, since the pristine structures and intrinsic properties of the grown CNTs are preserved.Despite the fact that many attempts have been reported,[3, 4, 9, 11] compared to the recent advances in the synthesis of CNTs,[2, 8, 12–15] the fabrication of electronic devices by direct growth of CNT is far below its potential.[3, 4, 16] This is mainly because traditional metal electrodes are unstable at very high temperatures (eg, 900 C) during the CNT growth in the chemical vapor deposition (CVD) process. For instance, gold (Au) becomes discontinuous, and the resistivity of titanium (Ti) and tantalum

Direct Growth of Horizontally Aligned Carbon Nanotubes Between Electrodes and Its Application to Field-Effect Transistors

Solution processed large area field effect transistors from dielectrophoreticly aligned arrays of carbon nanotubes

Localized Lateral Growth Of Single-Walled Carbon Nanotubes For Field-Effect Transistors By A Cobalt-Mix-Teos Method

Carbon Nanotube Lateral Field Emission Device with Embedded Field Effect Transistor

Efficient Carbon Nanotube Field Emitter Using Electrospun Carbon Nanofibers as a Flexible Electrode

High-rate Low-Temperature Growth of Vertically Aligned Carbon Nanotubes

Direct Growth of Aligned Carbon Nanotubes on Bulk Metals

Nanomanipulation of a single carbon nanotube for the fabrication of a field-effect transistor

Scalable Preparation of High-Density Semiconducting Carbon Nanotube Arrays for High-Performance Field-Effect Transistors.

All‐Carbon Electronic Devices Fabricated by Directly Grown Single‐Walled Carbon Nanotubes on Reduced Graphene Oxide Electrodes

Field-effect Transistors with Multiple Channels Constructed by Carbon Nanotubes

Growth of Tall Vertical Carbon Nanotube Forests using Al-Fe Catalysts and Transfer to Flexible Substrates

Low-Temperature Growth of Vertically Aligned Carbon Nanotubes for Field Emission

Fabrication of Nitrogen-doped Multi-walled Carbon Nanotube and Their Field Effect Transistor Properties

Self-aligned U-gate Carbon Nanotube Field-Effect Transistor with Extremely Small Parasitic Capacitance and Drain-Induced Barrier Lowering.

Aligned carbon nanotube field effect transistors by repeated compression-expansion cycles in Langmuir-Blodgett

Carbon nanotube field-effect transistors with integrated ohmic contacts and high-κ gate dielectrics

High-Performance, Hysteresis-Free Carbon Nanotube Field-Effect Transistors Via Directed Assembly

High-Density Carbon Nanotube Forest Growth on Copper Foil for Enhanced Thermal and Electrochemical Interfaces

Carbon Nanotube Multi-Channeled Field-Effect Transistors.