Abstract:Here we report a simple and scalable method to fabricate high performance thin-film field-effect transistors (FETs) with high yield based on chemically functionalized single-walled carbon nanotubes (SWNTs) by organic radical initiators. The UV-Vis-NIR spectra, Raman spectra and electrical characterization demonstrated that metallic species in CoMoCat 65 and HiPco SWNTs could be effectively eliminated after reaction with some organic radical initiators. The effects of the substrate properties on the electrical properties of FET devices were investigated, and the results showed that the electrical properties of FET devices fabricated on high hydrophobic substrates were better than those on low hydrophobic substrates. Furthermore, it was found that FET devices based on 1,1′-azobis(cyanocyclohexane)(ACN)-modified CoMoCat 65 SWNTs exhibited more excellent electrical performance with effective mobility of ∼11.8 cm2/Vs and on/off ratio of ∼2×105 as compared with benzoyl peroxide (BPO)-modified CoMoCat 65 SWNTs and lauoryl peroxideand (LPO)-modified HiPco SWNTs, likely due to the introduction of the electron-withdrawing groups (CN group) on the SWNT surface. This method does not require nontrivial reaction conditions or complicated purification after reaction, therefore promising low-cost production of high-performance devices for macroelectronics.

Fabrication of carbon nanotube field effect transistors by AC dielectrophoresis method

Improving the Performance of Aligned Carbon Nanotube-Based Transistors by Refreshing the Substrate Surface.

Fabrication of Carbon Nanotube Field-Effect Transistors by Fluidic Alignment Technique

Field-effect Transistors with Multiple Channels Constructed by Carbon Nanotubes

Self-aligned Electrodes for Suspended Carbon Nanotube Structures

Direct Growth of Horizontally Aligned Carbon Nanotubes Between Electrodes and Its Application to Field-Effect Transistors

Local-gated single-walled carbon nanotube field effect transistors assembled by AC dielectrophoresis

Solution processed large area field effect transistors from dielectrophoreticly aligned arrays of carbon nanotubes

Fabrication of Nitrogen-doped Multi-walled Carbon Nanotube and Their Field Effect Transistor Properties

Fabrication of Carbon Nanotube Diode with Atomic Force Microscopy Manipulation

Nanomanipulation of a single carbon nanotube for the fabrication of a field-effect transistor

Carbon Nanotube Multi-Channeled Field-Effect Transistors.

High Yield Fabrication of Semiconducting Thin-Film Field-Effect Transistors Based on Chemically Functionalized Single-Walled Carbon Nanotubes

Carbon Nanotube Thin Film Transistors Fabricated by an Etching Based Manufacturing Compatible Process

Selective Fabrication of Quasi-Parallel Single-Walled Carbon Nanotubes on Silicon Substrates

Fabrication of Nanoelectrodes Based on Controlled Placement of Carbon Nanotubes Using Alternating-Current Electric Field

All-around Contact for Carbon Nanotube Field-Effect Transistors Made by Ac Dielectrophoresis

Fabrication and Characterization of the Performance of Multi-Channel Carbon-Nanotube Field-Effect Transistors

Short Channel Carbon Nanotube Thin Film Transistors with High On/off Ratio Fabricated by Two-Step Fringing Field Dielectrophoresis

Fabrication of All‐Carbon Nanotube Electronic Devices on Flexible Substrates Through CVD and Transfer Methods

Fabrication of air-stable n-type carbon nanotube thin-film transistors on flexible substrates using bilayer dielectrics