Abstract:Field-effect transistors (FETs) have been fabricated using double-walled carbon nanotubes (DWCNTs), and electrical transport measurements have been carried out on 125 DWCNT FETs. Among these devices, 52 were found to show basically semiconducting field-effect characteristics, 44 show metallic characteristics, and 29 show neither pure semiconducting nor metallic characteristics. These 3 distinct types of field-effect characteristics were identified as resulting from the semiconducting (S)-S, metallic (M)-M or M-S, and S-M combinations of the two shells of the DWCNT. While the S-S and M-M or M-S DWCNT devices exhibit similar field-effect characteristics to those by single-walled carbon nanotube (SWCNT) devices, the S-M device responds uniquely to the external gate voltage. In particular, it was found that free charges in the inner metallic shell may screen the outer semiconducting shell from the gate effect and that the screening is directly related to the intershell interaction, which increases with increasing temperature and tube diameter. The screening is disadvantageous to the performance of DWCNT FETs, and a similar effect is expected to occur in MWCNTs.

Field-Effect Transistors Based on Single-Wall Carbon Nanotubes Bundles

Carbon Nanotube Lateral Field Emission Device with Embedded Field Effect Transistor

Semiconductor-enriched single wall carbon nanotube networks applied to field effect transistors

Electrothermal Characterization of Carbon Nanotube Field Effect Transistors (Cntfets)

Transformation of unipolar single-walled carbon nanotube field effect transistors to ambipolar induced by polystyrene nanosphere assembly.

Investigation on self-heating effect in carbon nanotube field-effect transistors

Comparative study on the characteristics among few-walled carbon nanotube array field-effect transistors

High performance n-type carbon nanotube field-effect transistors with chemically doped contacts

Hf-Contacted High-Performance Air-Stable N-Type Carbon Nanotube Transistors

Fabrication of Nitrogen-doped Multi-walled Carbon Nanotube and Their Field Effect Transistor Properties

Fabrication and Properties of Double Gated Double Walled Carbon Nanotube Field Effect Transistors

Coaxial p- and n-type carbon nanotube transistors with dopant-selective coatings

Unipolar P-Type Single-Walled Carbon Nanotube Field-Effect Transistors Using TTF–TCNQ As the Contact Material

Functionalized Metallic Single-Walled Carbon Nanotubes as a High-Performance Single-Molecule Organic Field Effect Transistor: An ab Initio Study

Nanotube and Nanowire Transistors

Carbon-Nanotube-Based Single-Electron/Hole Transistors

Field-effect Characteristics and Screening in Double-Walled Carbon Nanotube Field-Effect Transistors.

Carbon Nanotubes: from Growth, Placement and Assembly Control to 60mv/decade and Sub-60 Mv/decade Tunnel Transistors

Self-aligned ballistic n-type single-walled carbon nanotube field-effect transistors with adjustable threshold voltage.

Characterization of Single-Walled Carbon Nanotube and Graphene-Based Field-Effect Transistors

Carbon Nanotube Field‐Effect Transistors: Towards Entire‐Carbon‐Nanotube Circuits: the Fabrication of Single‐Walled‐Carbon‐Nanotube Field‐Effect Transistors with Local Multiwalled‐Carbon‐Nanotube Interconnects (adv. Mater. 13/2009)