Abstract:The control of the performance of single-walled carbon nanotube (SWCNT) random network-based transistors is of critical importance for their applications in electronic devices, such as complementary metal oxide semiconducting (CMOS)-based logics. In ambient conditions, SWCNTs are heavily p-doped by the H2O/O2 redox couple, and most doping processes have to counteract this effect, which usually leads to broadened hysteresis and poor stability. In this work, we coated an SWCNT network with various common polymers and compared their thin-film transistors' (TFTs') performance in a nitrogen-filled glove box. It was found that all polymer coatings will decrease the hysteresis of these transistors due to the partial removal of charge trapping sites and also provide the stable control of the doping level of the SWCNT network. Counter-intuitively, polymers with electron-withdrawing functional groups lead to a dramatically enhanced n-branch in their transfer curve. Specifically, SWCNT TFTs with poly (vinylidene fluoride) coating show an n-type mobility up to 61 cm2/Vs, with a decent on/off ratio and small hysteresis. The inverters constructed by connecting two ambipolar TFTs demonstrate high gain but with certain voltage loss. P-type or n-type doping from polymer coating layers could suppress unnecessary n- or p-branches, shift the threshold voltage and optimize the performance of these inverters to realize rail-to-rail switching. Similar devices also demonstrate interesting antiambipolar performance with tunable on and off voltage when tested in a different configuration.

Transformation of unipolar single-walled carbon nanotube field effect transistors to ambipolar induced by polystyrene nanosphere assembly.

Polymer Coating Enabled Carrier Modulation for Single-Walled Carbon Nanotube Network Inverters and Antiambipolar Transistors

Carbon Nanotube Lateral Field Emission Device with Embedded Field Effect Transistor

Improving the Performance of Aligned Carbon Nanotube-Based Transistors by Refreshing the Substrate Surface.

Field-Effect Transistors Based on Single-Wall Carbon Nanotubes Bundles

Fabrication of Carbon Nanotube Diode with Atomic Force Microscopy Manipulation

Unipolar P-Type Single-Walled Carbon Nanotube Field-Effect Transistors Using TTF–TCNQ As the Contact Material

Methylation-Induced Reversible Metallic-Semiconducting Transition of Single-Walled Carbon Nanotube Arrays for High-Performance Field-Effect Transistors.

Fabrication of A Nanoelectromechanical Switch Using A Suspended Carbon Nanotube

Nanotube and Nanowire Transistors

Photoresponsive Nanoscale Columnar Transistors

Semiconductor-enriched single wall carbon nanotube networks applied to field effect transistors

Hf-Contacted High-Performance Air-Stable N-Type Carbon Nanotube Transistors

Selective positioning and integration of individual single-walled carbon nanotubes.

Characterization of Single-Walled Carbon Nanotube and Graphene-Based Field-Effect Transistors

Charge Transfer Induced Polarity Switching in Carbon Nanotube Transistors

Nanoelectromechanical Switches with Vertically Aligned Carbon Nanotubes

Self-aligned Split Gate Electrodes Fabricated on Suspended Carbon Nanotubes

Fabrication of Nitrogen-doped Multi-walled Carbon Nanotube and Their Field Effect Transistor Properties

Functionalized Metallic Single-Walled Carbon Nanotubes as a High-Performance Single-Molecule Organic Field Effect Transistor: An ab Initio Study

Conformally Gated Surface Conducting Behaviors of Single-Walled Carbon Nanotube Thin-Film-Transistors