Abstract:The demand for increased information storage densities has pushed silicon technology to its limits and led to a focus on research on novel materials and device structures, such as magnetoresistive random access memory1,2,3 and carbon nanotube field-effect transistors4,5,6,7,8,9, for ultra-large-scale integrated memory10. Electromechanical devices are suitable for memory applications because of their excellent ‘ON–OFF’ ratios and fast switching characteristics, but they involve larger cells and more complex fabrication processes than silicon-based arrangements11,12,13. Nanoelectromechanical devices based on carbon nanotubes have been reported previously14,15,16,17, but it is still not possible to control the number and spatial location of nanotubes over large areas with the precision needed for the production of integrated circuits. Here we report a novel nanoelectromechanical switched capacitor structure based on vertically aligned multiwalled carbon nanotubes in which the mechanical movement of a nanotube relative to a carbon nanotube based capacitor defines ‘ON’ and ‘OFF’ states. The carbon nanotubes are grown with controlled dimensions at pre-defined locations on a silicon substrate in a process that could be made compatible with existing silicon technology, and the vertical orientation allows for a significant decrease in cell area over conventional devices. We have written data to the structure and it should be possible to read data with standard dynamic random access memory sensing circuitry. Simulations suggest that the use of high-k dielectrics in the capacitors will increase the capacitance to the levels needed for dynamic random access memory applications.

Nanoelectromechanical Switches with Vertically Aligned Carbon Nanotubes

Fabrication of A Nanoelectromechanical Switch Using A Suspended Carbon Nanotube

Ultrathin High-Mobility SWCNT Transistors with Electrodes Printed by Nanoporous Stamp Flexography

Nanoelectromechanical Switch with Low Voltage Drive

Nanotube Based Vertical Nano-Devices For High Integration Density

Fabrication of Carbon Nanotubes on Interdigitated Metal Electrode for Switchable Nanophotonic Devices

Cnt Based Mechanical Devices for Ulsi Memory

Fabrication of Electromechanical Switch Using Interconnected Single-Walled Carbon Nanotubes

Nanotube and Nanowire Transistors

Nanoscale Memory Cell Based on a Nanoelectromechanical Switched Capacitor

Carbon Nanotube Technology For Solid State And Vacuum Electronics

Design and Modeling of Carbon Nanotube Electromechanical Switches for Logic Device Application

Self-aligned Split Gate Electrodes Fabricated on Suspended Carbon Nanotubes

A Nanogripper Employing Aligned Multiwall Carbon Nanotubes

Carbon-Carbon Contacts for Robust Nanoelectromechanical Switches

NEMS Based Logic and Memory Circuits

Self-aligned Electrodes for Suspended Carbon Nanotube Structures

Nanoelectromechanical DRAM for Ultra-Large-scale Integration (ULSI)

Multilevel, Multicomponent Microarchitectures of Vertically-Aligned Carbon Nanotubes for Diverse Applications

Using Nanoscale Thermocapillary Flows to Create Arrays of Purely Semiconducting Single-Walled Carbon Nanotubes

Molecular Dynamics Analysis of Graphene-Based Nanoelectromechanical Switch