Abstract:The demand for increased information storage densities has pushed silicon technology to its limits and led to a focus on research on novel materials and device structures, such as magnetoresistive random access memory1,2,3 and carbon nanotube field-effect transistors4,5,6,7,8,9, for ultra-large-scale integrated memory10. Electromechanical devices are suitable for memory applications because of their excellent ‘ON–OFF’ ratios and fast switching characteristics, but they involve larger cells and more complex fabrication processes than silicon-based arrangements11,12,13. Nanoelectromechanical devices based on carbon nanotubes have been reported previously14,15,16,17, but it is still not possible to control the number and spatial location of nanotubes over large areas with the precision needed for the production of integrated circuits. Here we report a novel nanoelectromechanical switched capacitor structure based on vertically aligned multiwalled carbon nanotubes in which the mechanical movement of a nanotube relative to a carbon nanotube based capacitor defines ‘ON’ and ‘OFF’ states. The carbon nanotubes are grown with controlled dimensions at pre-defined locations on a silicon substrate in a process that could be made compatible with existing silicon technology, and the vertical orientation allows for a significant decrease in cell area over conventional devices. We have written data to the structure and it should be possible to read data with standard dynamic random access memory sensing circuitry. Simulations suggest that the use of high-k dielectrics in the capacitors will increase the capacitance to the levels needed for dynamic random access memory applications.

Nanotube Based Vertical Nano-Devices For High Integration Density

Nanoelectromechanical Switches with Vertically Aligned Carbon Nanotubes

Cnt Based Mechanical Devices for Ulsi Memory

Nanoelectromechanical DRAM for Ultra-Large-scale Integration (ULSI)

Carbon Nanotube Devices for Quantum Technology

Nanoscale Memory Cell Based on a Nanoelectromechanical Switched Capacitor

Nanoelectromechanical Switch with Low Voltage Drive

Monolithic Three‐dimensional Integration of Aligned Carbon Nanotube Transistors for High‐performance Integrated Circuits

NEMS Based Logic and Memory Circuits

Carbon Nanotube Technology For Solid State And Vacuum Electronics

Nanotube and Nanowire Transistors

Integrating Vertically Aligned Carbon Nanotubes on Micromechanical Structures

Multilevel, Multicomponent Microarchitectures of Vertically-Aligned Carbon Nanotubes for Diverse Applications

Fabrication of Carbon Nanotubes on Interdigitated Metal Electrode for Switchable Nanophotonic Devices

Fabrication of A Nanoelectromechanical Switch Using A Suspended Carbon Nanotube

Using Nanoscale Thermocapillary Flows to Create Arrays of Purely Semiconducting Single-Walled Carbon Nanotubes

Ferroelectric-carbon Nanotube Memory Devices.

Monolithic Integration of Carbon Nanotube Devices with Silicon Mos Technology

CARBON NANOTUBE BASED NONVOLATILE MEMORY DEVICES

Recent Advances in 1D Nanostructure Assembly and Direct Integration Methods for Device Applications

Carbon nanotube-nanopipe composite vertical arrays for enhanced electrochemical capacitance