Abstract:Abstract Transistors on aligned semiconducting carbon nanotubes (A-CNTs) have been considered a promising substitute for mainstream Si transistors to extend integrated circuit (IC) technology owing to their potential advantages of easy miniaturization and high energy efficiency, but whether A-CNT FETs can be scalably fabricated with ultrascaled whole dimensions while maintaining high performance remains questionable. Here, we explore the whole size scaling down potential of A-CNT transistors and demonstrate the possibility of implementing such small-geometry transistors in ultra-large-scale ICs that consist of billions of transistors. A-CNT transistors with a contacted gate pitch (CGP) of 175 nm have been achieved by simultaneously scaling the gate length and the contact length, and exhibit an on-current of 2.24 mA/μm and a peak transconductance of 1.64 mS/μm, surpassing silicon 45 nm node transistors in terms of both size and electronic performance. A static random-access memory (SRAM) cell has been built using six A-CNT transistors in an area of 0.967 μm2, which is comparable to the commercial silicon 90 nm technology node and is the smallest SRAM cell based on non-Si semiconductors. Furthermore, a full-contact structure is introduced between the metal and A-CNTs to achieve a contact resistance as low as 90 Ω·μm and to reduce the dependence on the contact length. A-CNT transistors downsized to a CGP of 55 nm (corresponding to the silicon 10 nm technology node) have been demonstrated to outperform 10 nm Si MOS transistors in terms of carrier mobility and Fermi velocity, indicating the tremendous potential of A-CNT transistors in high-performance digital ICs of sub 10 nm nodes.

Monolithic Three‐dimensional Integration of Aligned Carbon Nanotube Transistors for High‐performance Integrated Circuits

Aligned carbon nanotube integrated circuit downsizing toward a sub-10 nm node

Carbon Nanotube Materials for Future Integrated Circuit Applications

Interface States in Gate Stack of Carbon Nanotube Array Transistors.

Improving the Performance of Aligned Carbon Nanotube-Based Transistors by Refreshing the Substrate Surface.

Speeding up carbon nanotube integrated circuits through three-dimensional architecture

High-Performance Complementary Transistors and Medium-Scale Integrated Circuits Based on Carbon Nanotube Thin Films.

Monolithic Three-Dimensional Integration of Carbon Nanotube Circuits and Sensors for Smart Sensing Chips

Complementary Transistors Based on Aligned Semiconducting Carbon Nanotube Arrays

High-Performance Carbon Nanotube Thin-Film Transistor Technology

Enhancement‐Mode Field‐Effect Transistors and High‐Speed Integrated Circuits Based on Aligned Carbon Nanotube Films

High-Performance Carbon Nanotube Optoelectronic Transistor With Optimized Process for 3D Communication Circuit Applications

Deep-Submicrometer Complementary Metal-Oxide-Semiconductor Transistors Based on Carbon Nanotube Films

Monolithic three-dimensional integration of complementary two-dimensional field-effect transistors

Three-Dimensional Flexible Complementary Metal-Oxide-Semiconductor Logic Circuits Based on Two-Layer Stacks of Single-Walled Carbon Nanotube Networks.

Building High Performance Transistors on Carbon Nanotube Channel

Monolithic 3D integration of back-end compatible 2D material FET on Si FinFET

Monolithic 3D Integration of Vertically Stacked CMOS Devices and Circuits with High-Mobility Atomic-Layer-Deposited In2O3 N-Fet and Polycrystalline Si P-Fet: Achieving Large Noise Margin and High Voltage Gain of 134 V/V

Highly Uniform Carbon Nanotube Field-Effect Transistors and Medium Scale Integrated Circuits.

Wafer-scale fabrication of carbon-nanotube-based CMOS transistors and circuits with high thermal stability