Abstract:Even though competitive 2D field-effect transistors (FETs) with the scaled channel dimensions have been demonstrated, it still is a challenge to integrate 2D semiconductors and high-κ dielectrics without deteriorating their interfaces, while decreasing capacitance equivalent thickness (CET) of dielectrics to maintain the gate controllability. In particular, the dielectric/channel interface is one of the predominant factors to affect device performance, including carrier mobility, switching behavior, and drifts of device parameters. This is often caused by the nature of dielectrics used, and the integrating methodologies applied. Typically, high-κ dielectrics used in silicon technology (i.e., Al2O3 and HfO2) are inherited by 2D FETs. The amorphous nature of these oxides makes the elimination of charge scattering and trapping sites at the dielectric/channel interfaces extremely difficult, not to mention that the direct deposition of dielectrics usually damages the 2D channel and results in poor uniformity in sheer thickness. Some interfacial passivation layers and processes have been developed, but they lead to thickening overall CET instead. Alternative approaches with the crystalline dielectric materials such as multilayer hBN and epitaxial calcium fluoride (CaF2), whose surfaces are well-constructed and atomic-flat, have demonstrated the competitive advantages of crystalline dielectric over the conventional amorphous oxides in spite of relatively lower κ values. Here, we demonstrate ultra-scaled 2D FETs with desirable sub-1 nm CET through heterogeneous integration of monolayer CVD MoS2 and quasi-2D single-crystalline SrTiO3 membranes, where the optimized SrTiO3 gate dielectrics exhibit a low gate leakage (J leak < 10-2 A/cm2 at 2.5 MV/cm). Typical transistors manifest good reliability and competitive performance characteristics, including steep subthreshold swings (SS) down to ~70 mV dec-1 and ON/OFF current ratios up to 107, matching low-power specifications suggested by the latest International Roadmap for Devices and Systems (IRDS). In addition, the van der Waals (vdW) interface between quasi-2D dielectrics and 2D semiconductors moderates the unfavorable fringing-induced barrier lowering (FIBL) effect occurring in ultra-scaled Si transistors with very high-κ dielectrics, which broadens the dielectric selection in 2D electronics for future technology node.

Monolithic 3D integration of back-end compatible 2D material FET on Si FinFET

Monolithic Three‐dimensional Integration of Aligned Carbon Nanotube Transistors for High‐performance Integrated Circuits

Monolithic three-dimensional integration of complementary two-dimensional field-effect transistors

Monolithic 3D Integration of Vertically Stacked CMOS Devices and Circuits with High-Mobility Atomic-Layer-Deposited In2O3 N-Fet and Polycrystalline Si P-Fet: Achieving Large Noise Margin and High Voltage Gain of 134 V/V

Three-Dimensional Integration of Multi-Channel MoS2 Devices for High Drive Current FETs.

Low-temperature (≤550 °C) P-Channel Schottky Barrier SOI FinFETs for Monolithic 3D Integration

Three-Dimensional Stacked-Fin-Cmos Integrated Circuit Using Double Layer Soi Material

High-Performance CMOS Inverter Array with Monolithic 3D Architecture Based on CVD-Grown N-Mos2 and P-Mote2.

Heterogeneous Integration of Atomically Thin Semiconductors for Non-von Neumann CMOS

High‐Performance CMOS Inverter Array with Monolithic 3D Architecture Based on CVD‐Grown n‐MoS 2 and p‐MoTe 2

Ultimate Monolithic-3D Integration with 2D Materials: Rationale, Prospects, and Challenges

(Invited, Digital Presentation) Heterogeneous Integration of Ultrahigh-Κ Single-Crystalline SrTiO3 Membranes for Two-Dimensional Electronics

Simulation of Novel Nano Low-Dimensional FETs at the Scaling Limit

Wafer‐Scale Demonstration of MBC‐FET and C‐FET Arrays Based on Two‐Dimensional Semiconductors

Comprehensive Understanding of Schottky Barrier Tunneling FET Built Upon Ultrathin Silicon Nanowire for Monolithic 3D Integration

Highly Flexible Hybrid CMOS Inverter Based on Si Nanomembrane and Molybdenum Disulfide.

Wafer-level heterogeneous integration of electrochemical devices and semiconductors for a monolithic chip

Monolithic-3D Integration with 2D Materials: Toward Ultimate Vertically-Scaled 3D-ICs

Low-Temperature (≤500 °C) Complementary Schottky Source/Drain FinFETs for 3D Sequential Integration

Scalable Integration of Hybrid High-Κ Dielectric Materials on Two-Dimensional Semiconductors

Vertical Integration of 2D Building Blocks for All‐2D Electronics