Abstract:Abstract Micro-scale electrochemical devices, despite their wide applications and unique potential to achieve ‘More than Moore's law’, face significant limitations in constructing functional chips due to their inability to integrate with semiconductors. In this study, we propose an electrochemical gating effect and material work function matching criteria, and thus establish the first heterogeneous integration theory for electrochemical devices and semiconductors. Accordingly, we create a novel 3D integration architecture and CMOS-compatible fabrication methodology, including optimizing individual devices, electron/ionic isolation, interconnection, and encapsulation. As a demonstration, we integrate electrochemical micro supercapacitors with P-N junction diode rectifier bridge circuit and successfully obtain the first monolithic rectifier-filter chip, which shows a revolutionary volume reduction of 98% compared to non-integrateable commercial products. The chip can provide a stable output with a tiny ripple factor of 0.23% in typical conditions, surpassing the requirements of most applications by more than one order of magnitude. More importantly, all the processes are suitable for mass production in standard foundries, allowing ubiquitous applications of electrochemistry in integrated electronics.

What problem does this paper attempt to address?

The main problem this paper attempts to address is the challenge of heterogeneous integration between microscale electrochemical devices and traditional semiconductor chips. Specifically, although microscale electrochemical devices have broad application potential in fields such as energy storage, sensors, displays, and actuators, and can achieve "beyond Moore's Law" functionalities, their integration with semiconductor devices faces significant challenges. These challenges mainly include: 1. **Material and process incompatibility**: Electrochemical devices and semiconductor devices have significant differences in material properties, process conditions, and operating environments. For example, semiconductor processes require high temperatures and high pressures, which may damage the fragile electrochemical materials; while active ions in electrochemical materials can act as additional dopants during long-term use, affecting the electron/hole transport in semiconductors. 2. **Current leakage and electric field interference**: Current leakage and electric field interference between electrochemical devices and semiconductor devices are another major issue. Ion diffusion and electron migration in electrochemical materials can lead to current leakage, while electrochemical components under high voltage may generate electric fields on the semiconductor surface, causing carrier depletion or even inversion. 3. **Lack of theoretical foundation**: There is currently a lack of a systematic theory to guide the heterogeneous integration of electrochemical devices and semiconductor devices, making it difficult to design efficient and stable integrated chips. To address these issues, the authors propose the electrochemical gate effect and material work function matching criteria, establishing a theory for the heterogeneous integration of electrochemical devices and semiconductor devices. They also propose a new 3D integration architecture and a CMOS-compatible manufacturing method. Using this method, they successfully integrated electrochemical micro-supercapacitors with a P-N junction diode rectifier bridge circuit, creating the first monolithic rectifier filter chip. The chip volume was reduced by 98%, and it output stably under typical conditions with a ripple factor of only 0.23%, far exceeding the requirements of most applications. Additionally, all processes are suitable for large-scale production in standard fabs, laying the foundation for the widespread application of electrochemistry in the field of integrated electronics.

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