Abstract:While preparing uniform dielectric layers on two-dimensional (2D) materials is a key device architecture requirement to achieve next-generation 2D devices, conventional deposition or transfer approaches have been so far limited by their high cost, fabrication complexity, and especially poor dielectric/2D material interface quality. Here, we demonstrate that HfO2, a high-K dielectric, can be prepared on the top surface of 2D HfS2 through plasma oxidation, which results in a heterostructure composed of a 2D van der Waals semiconductor and its insulating native oxide. A highly uniform dielectric layer with a controlled thickness can be prepared; the possibility of unlimited layer-by-layer oxidation further differentiates our work from previous attempts on other 2D semiconducting materials, which exhibit self-limited oxidation up to only a few layers. High resolution transmission electron microscopy was used to show that the converted HfO2/HfS2 hybrid structure is of high quality with an atomically abrupt, impurity- and defect-free interface. Density functional theory calculations show that the unlimited layer-by-layer oxidation occurs because oxygen atoms can barrierlessly penetrate into the HfS2 surface and the extracted sulfur atoms are absorbed into the oxygen vacancy sites within HfO2 under O-rich conditions. A top-gated field-effect transistor fabricated with the converted HfO2/HfS2 hybrid structure was found to exhibit a low interface trap density Dit of 6 × 1011 cm-2 eV-1 between the HfS2 channel and the converted HfO2 dielectric, and a high on/off current ratio above 107. Our approach provides a low cost, simple, and ultraclean manufacturing technique for integrating 2D material into device applications.

Scalable Integration of Hybrid High-Κ Dielectric Materials on Two-Dimensional Semiconductors

Wafer-scale high-κ dielectrics for two-dimensional circuits via van der Waals integration

Epitaxial Integration of Transferable High-κ Dielectric and 2D Semiconductor

Integrating high-quality dielectrics with one-nanometer equivalent oxide thickness on two-dimensional electronic devices

Reliability of Ultrathin High-κ Dielectrics on Chemical-vapor Deposited 2D Semiconductors

Uniform and ultrathin high-κ gate dielectrics for two-dimensional electronic devices

Liquid Metal Oxide-assisted Integration of High-k Dielectrics and Metal Contacts for Two-Dimensional Electronics

A Single-Crystalline Native Dielectric for Two-Dimensional Semiconductors with an Equivalent Oxide Thickness below 0.5 Nm

Direct Integration of Ferroelectric Hafnium Zirconium Oxide as Top-Gate High−κ Dielectrics for Two-Dimensional Transistors

Janus Electronic Devices with Ultrathin High-κ Gate Dielectric Directly Integrated on 1T'-Mote2.

Crystalline Complex Oxide Membrane: Sub-1 nm CET Dielectrics for 2D Transistors

Van der Waals integration of high-κ perovskite oxides and two-dimensional semiconductors

Ultrathin Van Der Waals Lanthanum Oxychloride Dielectric for Two‐Dimensional Field‐Effect Transistors

A native oxide high-kappa gate dielectric for two-dimensional electronics

Ultrathin Van Der Waals Lanthanum Oxychloride Dielectric for 2D Field-Effect Transistors

Improved Integration of Ultra-Thin High-K Dielectrics in Few-Layer Mos2 Fet by Remote Forming Gas Plasma Pretreatment

Ultimate dielectric scaling of 2D transistors via van der Waals metal integration

Reliability of Ultrathin High- Dielectrics on 2D Semiconductors

HfO2/HfS2 hybrid heterostructure fabricated via controllable chemical conversion of two-dimensional HfS2

Single-crystalline van der Waals layered dielectric with high dielectric constant