Abstract:Abstract Two-dimensional (2D) structures composed of atomically thin materials with high carrier mobility have been studied as candidates for future transistors. However, due to the unavailability of suitable high-quality dielectrics, 2D field-effect transistors (FETs) cannot attain the full theoretical potential and advantages despite their superior physical and electrical properties. Herein, we demonstrate the fabrication of atomically thin single-crystalline Al 2 O 3 (c-Al 2 O 3 ) as the high-quality top-gate dielectric layer in 2D FETs. By using the epitaxial lift-off and intercalative oxidation techniques, a stable, stoichiometric, and atomically thin c-Al 2 O 3 layer with a thickness of 1.25 nm is formed on the single-crystalline Al surface. Owing to the favorable crystalline structure and well-defined interfaces, the gate leakage current, interface state density, and dielectric strength meet the International Roadmap for Devices and Systems (IRDS) requirements for low-power devices. By means of a one-step transfer process of the source, drain, dielectric materials, and gate onto molybdenum disulfide (MoS 2 ), the self-aligned top-gate MoS 2 FET devices are fabricated. Since direct lithography or high-energy deposition can be avoided during fabrication, the MoS 2 FETs deliver outstanding performance including a steep subthreshold swing of 61 mV/dec, extremely high on/off current ratio of 10 8 , and negligible hysteresis of 10 mV. In addition, a batch of 100 FETs with good uniformity of electronical characteristics has been fabricated. The innovative technique and materials demonstrate the possibility of producing high-quality single-crystalline oxides such as ferroelectric oxides, wide-bandgap oxides, and magnetic oxides suitable for integration into fully scalable advanced 2D FETs including negative capacitance transistors and spin transistors.

Direct Integration of Ferroelectric Hafnium Zirconium Oxide as Top-Gate High−κ Dielectrics for Two-Dimensional Transistors

Scalable Integration of Hybrid High-Κ Dielectric Materials on Two-Dimensional Semiconductors

Liquid Metal Oxide-assisted Integration of High-k Dielectrics and Metal Contacts for Two-Dimensional Electronics

Wafer-scale high-κ dielectrics for two-dimensional circuits via van der Waals integration

Epitaxial Integration of Transferable High-κ Dielectric and 2D Semiconductor

Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors

Atomic-scale ferroic HfO2-ZrO2 superlattice gate stack for advanced transistors

Single-crystalline metal oxides as dielectrics for top-gate two-dimensional transistors

Single-crystalline metal-oxide dielectrics for top-gate 2D transistors

Uniform and ultrathin high-κ gate dielectrics for two-dimensional electronic devices

Steep-Slope Hysteresis-Free Negative-Capacitance 2D Transistors

Two-Dimensional ZrS2 and HfS2 for Making Sub-10 nm High-Performance P-Type Transistors

Janus Electronic Devices with Ultrathin High-κ Gate Dielectric Directly Integrated on 1T'-Mote2.

Two-Dimensional ZrS 2 and HfS 2 for Making Sub-10 nm High-Performance P-Type Transistors

Integrating high-quality dielectrics with one-nanometer equivalent oxide thickness on two-dimensional electronic devices

Liquid Metal Printed Ultrathin Oxides for Monolayer WS2 Top-Gate Transistors

Two-dimensional negative capacitance transistor with polyvinylidene fluoride-based ferroelectric polymer gating

Ferroelectric gating of two-dimensional semiconductors for the integration of steep-slope logic and neuromorphic devices

Synergistic Engineering of Top Gate Stack for Low Hysteresis 2D MoS2 Transistors

Two dimensional semiconducting materials for ultimately scaled transistors