Abstract:Two-dimensional (2D) semiconductors are widely recognized as attractive channel materials for low-power electronics. However, an unresolved challenge is the integration of high-quality, ultrathin high-\k{appa} dielectrics that fully meet the roadmap requirements for low-power applications. With a dangling-bond free surface, the deposition of dielectrics by atomic layer deposition (ALD) on 2D materials is usually characterized with non-uniform nucleation and island formation, producing a highly porous dielectric layer with serious leakage particularly at the small equivalent oxide thickness (EOT) limit. Here, we report the robust ALD of highly uniform high-\k{appa} dielectric on 2D semiconductors by using ~0.3 nm-thick exclusively monolayer molecular crystal as seeding layer. Ultrathin dielectrics down to 1 nm EOT is realized on graphene, MoS2 and WSe2, with considerably reduced roughness, density of interface states, leakage current and improved breakdown field compared to prior methods. Taking advantage of the reduced EOT, we demonstrate graphene RF transistors operating at 60 GHz, as well as MoS2 and WSe2 complementary metal-oxide-semiconductor (CMOS) transistors with Vdd =0.8 V and ideal subthreshold swing (SS) of 60 mV/dec, 20 nm-channel-length MoS2 transistors with on/off ratio over 10^7. These studies highlight that our dielectric integration method is generally applicable for different 2D materials, and compatible with top-down fabrication process on large-area chemical vapor deposited films.

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is: how to integrate high - quality, ultrathin high - dielectric - constant (high - κ) dielectric layers on two - dimensional semiconductor materials to meet the development requirements of low - power - consumption electronic devices. Specifically, the paper focuses on the uniform deposition of high - dielectric - constant dielectric layers with an equivalent oxide thickness (EOT) of less than 1 nanometer on two - dimensional materials such as graphene, molybdenum disulfide (MoS₂), and tungsten diselenide (WSe₂). The key to this challenge lies in how to overcome the characteristic of no dangling bonds on the surface of two - dimensional materials, so that uniform nucleation can be achieved during the atomic layer deposition (ALD) process, avoiding the formation of porous dielectric layers, thereby reducing leakage current, increasing breakdown field strength, and improving interface quality. To achieve this goal, the research team has developed a technique using monolayer crystals as a seed layer. By controlling the thickness of the monolayer crystals (about 0.3 nanometers), the deposition of highly uniform high - dielectric - constant dielectric layers has been achieved. This method not only significantly reduces the EOT but also improves the performance of devices, such as graphene radio - frequency transistors with an operating frequency of 60 GHz, and MoS₂ and WSe₂ complementary metal - oxide - semiconductor (CMOS) transistors with an ideal sub - threshold swing (SS) and a high on - off ratio. These results demonstrate the general applicability of this dielectric - layer integration method to different two - dimensional materials and its compatibility with existing top - down manufacturing processes, which is suitable for large - area chemical - vapor - deposition films.

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