Uniform and ultrathin high-κ gate dielectrics for two-dimensional electronic devices
Weisheng Li,Jian Zhou,Songhua Cai,Zhihao Yu,Jialin Zhang,Nan Fang,Taotao Li,Yun Wu,Tangsheng Chen,Xiaoyu Xie,Haibo Ma,Ke Yan,Ningxuan Dai,Xiangjin Wu,Huijuan Zhao,Zixuan Wang,Daowei He,Lijia Pan,Yi Shi,Peng Wang,Wei Chen,Kosuke Nagashio,Xiangfeng Duan,Xinran Wang
DOI: https://doi.org/10.1038/s41928-019-0334-y
IF: 33.255
2019-12-01
Nature Electronics
Abstract:Two-dimensional semiconductors could be used as a channel material in low-power transistors, but the deposition of high-quality, ultrathin high-κ dielectrics on such materials has proved challenging. In particular, atomic layer deposition typically leads to non-uniform nucleation and island formation, creating a porous dielectric layer that suffers from current leakage, particularly when the equivalent oxide thickness is small. Here, we report the atomic layer deposition of high-κ gate dielectrics on two-dimensional semiconductors using a monolayer molecular crystal as a seeding layer. The approach can be used to grow dielectrics with an equivalent oxide thickness of 1 nm on graphene, molybdenum disulfide (MoS2) and tungsten diselenide (WSe2). Compared with dielectrics created using established methods, our dielectrics exhibit a reduced roughness, density of interface states and leakage current, as well as an improved breakdown field. With the technique, we fabricate graphene radio-frequency transistors that operate at 60 GHz, and MoS2 and WSe2 complementary metal–oxide–semiconductor transistors with a supply voltage of 0.8 V and subthreshold swing down to 60 mV dec−1. We also create MoS2 transistors with a channel length of 20 nm, which exhibit an on/off ratio of over 107. Using a monolayer molecular crystal as a seeding layer, hafnium oxide dielectrics with an equivalent oxide thickness of only 1 nm can be deposited on graphene, molybdenum disulfide and tungsten diselenide.
engineering, electrical & electronic