Abstract:Two-dimensional (2D) semiconductors such as molybdenum disulfide (MoS 2 ) have attracted tremendous interest for transistor applications. However, the fabrication of 2D transistors using traditional lithography or deposition processes often causes undesired damage and contamination to the atomically thin lattices, partially degrading the device performance and leading to large variation between devices. Here we demonstrate a highly reproducible van der Waals integration process for wafer-scale fabrication of high-performance transistors and logic circuits from monolayer MoS 2 grown by chemical vapour deposition. By designing a quartz/polydimethylsiloxane semirigid stamp and adapting a standard photolithography mask-aligner for the van der Waals integration process, our strategy ensures a uniform mechanical force and a bubble-free wrinkle-free interface during the pickup/release process, which is crucial for robust van der Waals integration over a large area. Our scalable van der Waals integration process allows damage-free integration of high-quality contacts on monolayer MoS 2 at the wafer scale and enables high-performance 2D transistors. The van-der-Waals-contacted devices display an atomically clean interface with much smaller threshold variation, higher on-current, smaller off-current, larger on/off ratio and smaller subthreshold swing than those fabricated with conventional lithography. The approach is further used to create various logic gates and circuits, including inverters with a voltage gain of up to 585, and logic OR gates, NAND gates, AND gates and half-adder circuits. This scalable van der Waals integration method may be useful for reliable integration of 2D semiconductors with mature industry technology, facilitating the technological transition of 2D semiconductor electronics.

Simultaneous synthesis and integration of two-dimensional electronic components

Chemical assembly of atomically thin transistors and circuits in a large scale

Large-scale Chemical Assembly of Atomically Thin Transistors and Circuits

Reliable wafer-scale integration of two-dimensional materials and metal electrodes with van der Waals contacts

Scaling-up Atomically Thin Coplanar Semiconductor-Metal Circuitry via Phase Engineered Chemical Assembly

One-Step Synthesis of Two-Dimensional Metal-Semiconductor Circuitry Based on W-Triggered Spatial Phase Engineering

Chemical Synthesis and Integration of Highly Conductive PdTe2 with Low‐Dimensional Semiconductors for P‐type Transistors with Low Contact Barriers

Graphene-Transition Metal Dichalcogenide Heterojunctions for Scalable and Low-Power Complementary Integrated Circuits

Vertical Integration of 2D Building Blocks for All‐2D Electronics

Intergranular Diffusion‐Assisted Liquid‐Phase Chemical Vapor Deposition for Wafer‐Scale Synthesis of Patternable 2D Semiconductors

Liquid Metal Oxide-assisted Integration of High-k Dielectrics and Metal Contacts for Two-Dimensional Electronics

Epitaxial Integration of Transferable High-κ Dielectric and 2D Semiconductor

Janus Electronic Devices with Ultrathin High-κ Gate Dielectric Directly Integrated on 1T'-MoTe 2

Highly reproducible van der Waals integration of two-dimensional electronics on the wafer scale

Chemical Synthesis and Integration of Highly Conductive PdTe 2 with Low‐Dimensional Semiconductors for p‐Type Transistors with Low Contact Barriers

Scalable Integration of Hybrid High-Κ Dielectric Materials on Two-Dimensional Semiconductors

Progress of Large-Scale Synthesis and Electronic Device Application of Two-Dimensional Transition Metal Dichalcogenides.

Doping, Contact and Interface Engineering of Two-Dimensional Layered Transition Metal Dichalcogenides Transistors

A Single‐Crystal Antimony Trioxide Dielectric for 2D Field‐Effect Transistors

Integrating high-quality dielectrics with one-nanometer equivalent oxide thickness on two-dimensional electronic devices