Abstract:Two-dimensional (2D) materials, consisting of atomically thin crystal layers bound by the van der Waals force, have attracted much interest because of their potential in diverse technologies, including electronics, optoelectronics and catalysis1–10. In particular, solution-processable 2D semiconductor (such as MoS2) nanosheets are attractive building blocks for large-area thin-film electronics. In contrast to conventional zero- and one-dimensional nanostructures (quantum dots and nanowires, respectively), which are typically plagued by surface dangling bonds and associated trapping states, 2D nanosheets have dangling-bond-free surfaces. Thin films created by stacking multiple nanosheets have atomically clean van der Waals interfaces and thus promise excellent charge transport11–15. However, preparing high-quality solution-processable 2D semiconductor nanosheets remains a challenge. For example, MoS2 nanosheets and thin films produced using lithium intercalation and exfoliation are plagued by the presence of the metallic 1T phase and poor electrical performance (mobilities of about 0.3 square centimetres per volt per second and on/off ratios of less than 10)2,12, and materials produced by liquid exfoliation exhibit an intrinsically broad thickness distribution, which leads to poor film quality and unsatisfactory thin-film electrical performance (mobilities of about 0.4 square centimetres per volt per second and on/off ratios of about 100)14,16,17. Here we report a general approach to preparing highly uniform, solution-processable, phase-pure semiconducting nanosheets, which involves the electrochemical intercalation of quaternary ammonium molecules (such as tetraheptylammonium bromide) into 2D crystals, followed by a mild sonication and exfoliation process. By precisely controlling the intercalation chemistry, we obtained phase-pure, semiconducting 2H-MoS2 nanosheets with a narrow thickness distribution. These nanosheets were then further processed into high-performance thin-film transistors, with room-temperature mobilities of about 10 square centimetres per volt per second and on/off ratios of 106 that greatly exceed those obtained for previous solution-processed MoS2 thin-film transistors. The scalable fabrication of large-area arrays of thin-film transistors enabled the construction of functional logic gates and computational circuits, including an inverter, NAND, NOR, AND and XOR gates, and a logic half-adder. We also applied our approach to other 2D materials, including WSe2, Bi2Se3, NbSe2, In2Se3, Sb2Te3 and black phosphorus, demonstrating its potential for generating versatile solution-processable 2D materials.

Large-scale Chemical Assembly of Atomically Thin Transistors and Circuits

Chemical assembly of atomically thin transistors and circuits in a large scale

Scaling-up Atomically Thin Coplanar Semiconductor-Metal Circuitry via Phase Engineered Chemical Assembly

Large-Scale Vertical 1T′/2H MoTe2 Nanosheet-Based Heterostructures for Low Contact Resistance Transistors

Reliable wafer-scale integration of two-dimensional materials and metal electrodes with van der Waals contacts

Monolayer Molybdenum Disulfide Transistors with Single-Atom-Thick Gates.

Simultaneous synthesis and integration of two-dimensional electronic components

Pass‐transistor Logic Circuits Based on Wafer‐Scale Two‐Dimensional Semiconductors

Large-Scale Vertical 1T′/2H MoTe 2 Nanosheet-Based Heterostructures for Low Contact Resistance Transistors

High Performance Few-Layer MoS2 Transistor Arrays with Wafer Level Homogeneity Integrated by Atomic Layer Deposition

One‐Step Van der Waals Integration of Multi‐Threshold 2D Functional Circuits

Large-scale 2D Electronics based on Single-layer MoS2 Grown by Chemical Vapor Deposition

Highly reproducible van der Waals integration of two-dimensional electronics on the wafer scale

Solution-processable 2D semiconductors for high-performance large-area electronics

Graphene-Transition Metal Dichalcogenide Heterojunctions for Scalable and Low-Power Complementary Integrated Circuits

High-Performance Wafer-Scale MoS2 Transistors Toward Practical Application

Large scale 2D/3D hybrids based on gallium nitride and transition metal dichalcogenides

Progress of Large-Scale Synthesis and Electronic Device Application of Two-Dimensional Transition Metal Dichalcogenides.

Hysteresis‐Free Hexagonal Boron Nitride Encapsulated 2D Semiconductor Transistors, NMOS and CMOS Inverters

Two-dimensional transition metal dichalcogenides as atomically thin semiconductors: opportunities and challenges

Bridging Synthesis and Controllable Doping of Monolayer 4 In. Length Transition-Metal Dichalcogenides Single Crystals with High Electron Mobility