Abstract:Two-dimensional (2D) materials, consisting of atomically thin crystal layers bound by the van der Waals force, have attracted much interest because of their potential in diverse technologies, including electronics, optoelectronics and catalysis1–10. In particular, solution-processable 2D semiconductor (such as MoS2) nanosheets are attractive building blocks for large-area thin-film electronics. In contrast to conventional zero- and one-dimensional nanostructures (quantum dots and nanowires, respectively), which are typically plagued by surface dangling bonds and associated trapping states, 2D nanosheets have dangling-bond-free surfaces. Thin films created by stacking multiple nanosheets have atomically clean van der Waals interfaces and thus promise excellent charge transport11–15. However, preparing high-quality solution-processable 2D semiconductor nanosheets remains a challenge. For example, MoS2 nanosheets and thin films produced using lithium intercalation and exfoliation are plagued by the presence of the metallic 1T phase and poor electrical performance (mobilities of about 0.3 square centimetres per volt per second and on/off ratios of less than 10)2,12, and materials produced by liquid exfoliation exhibit an intrinsically broad thickness distribution, which leads to poor film quality and unsatisfactory thin-film electrical performance (mobilities of about 0.4 square centimetres per volt per second and on/off ratios of about 100)14,16,17. Here we report a general approach to preparing highly uniform, solution-processable, phase-pure semiconducting nanosheets, which involves the electrochemical intercalation of quaternary ammonium molecules (such as tetraheptylammonium bromide) into 2D crystals, followed by a mild sonication and exfoliation process. By precisely controlling the intercalation chemistry, we obtained phase-pure, semiconducting 2H-MoS2 nanosheets with a narrow thickness distribution. These nanosheets were then further processed into high-performance thin-film transistors, with room-temperature mobilities of about 10 square centimetres per volt per second and on/off ratios of 106 that greatly exceed those obtained for previous solution-processed MoS2 thin-film transistors. The scalable fabrication of large-area arrays of thin-film transistors enabled the construction of functional logic gates and computational circuits, including an inverter, NAND, NOR, AND and XOR gates, and a logic half-adder. We also applied our approach to other 2D materials, including WSe2, Bi2Se3, NbSe2, In2Se3, Sb2Te3 and black phosphorus, demonstrating its potential for generating versatile solution-processable 2D materials.

Solution-processable 2D semiconductors for high-performance large-area electronics

High-mobility patternable MoS2 percolating nanofilms

A library of 2D electronic material inks synthesized by liquid-metal-assisted intercalation of crystal powders

All-Solution-Processed High-Performance MoS 2 Thin-Film Transistors with a Quasi-2D Perovskite Oxide Dielectric

Chemical assembly of atomically thin transistors and circuits in a large scale

Large-scale Chemical Assembly of Atomically Thin Transistors and Circuits

Thin-Film Transistors from Electrochemically Exfoliated In2Se3 Nanosheets

Versatile solution-processed synthesis of two-dimensional ultrathin metal chalcogenides following Frank-van der Merwe growth.

High Performance Few-Layer MoS2 Transistor Arrays with Wafer Level Homogeneity Integrated by Atomic Layer Deposition

Large-Area MoS2 via Colloidal Nanosheet Ink for Integrated Memtransistor

Solution processable colloidal nanoplates as building blocks for high-performance electronic thin films on flexible substrates.

Large-Area Chemical Vapor Deposited MoS2 with Transparent Conducting Oxide Contacts toward Fully Transparent 2D Electronics

A Single‐Crystal Antimony Trioxide Dielectric for 2D Field‐Effect Transistors

Interface Capture Effect Printing Atomic-Thick 2D Semiconductor Thin Films.

High-Performance Wafer-Scale MoS2 Transistors Toward Practical Application

Electrical Properties of Electrochemically Exfoliated 2D Transition Metal Dichalcogenides Transistors for Complementary Metal‐Oxide‐Semiconductor Electronics

Fabrication of p-type 2D single-crystalline transistor arrays with Fermi-level-tuned van der Waals semimetal electrodes

Atomic layer deposited 2D MoS2 atomic crystals: from material to circuit

High‐performance solution‐processed 2D p‐type WSe2 transistors and circuits through molecular doping

Low Residual Carrier Concentration and High Mobility in 2D Semiconducting Bi2O2Se

Composition-Tunable Transition Metal Dichalcogenide Nanosheets via a Scalable, Solution-Processable Method