Abstract:Two-dimensional van der Waals semiconductors are promising for future nanoelectronics. However, integrating high-k gate dielectrics for device applications is challenging as the inert van der Waals material surfaces hinder uniform dielectric growth. Here, we report a liquid metal oxide-assisted approach to integrate ultrathin, high-k HfO2 dielectric on 2D semiconductors with atomically smooth interfaces. Using this approach, we fabricated 2D WS2 top-gated transistors with subthreshold swings down to 74.5 mV/dec, gate leakage current density below 10-6 A/cm2, and negligible hysteresis. We further demonstrate a one-step van der Waals integration of contacts and dielectrics on graphene. This can offer a scalable approach toward integrating entire prefabricated device stack arrays with 2D materials. Our work provides a scalable solution to address the crucial dielectric engineering challenge for 2D semiconductors, paving the way for high-performance 2D electronics.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is the challenge of integrating a high - dielectric - constant (high - k) gate dielectric layer on two - dimensional materials (such as transition metal dichalcogenides TMDs). Specifically, due to the inert properties of the surfaces of two - dimensional materials, it is very difficult to uniformly grow high - quality high - k dielectric layers on these materials. This restricts the development of high - performance electronic devices based on two - dimensional materials, especially in achieving the low subthreshold swing (SS), low gate leakage current and low hysteresis required for low - power - consumption applications. The paper proposes a method assisted by liquid - metal oxides to achieve the integration of an ultrathin, high - k HfO_2 dielectric layer with an atomically smooth interface of two - dimensional semiconductors. This method can not only significantly improve the performance of field - effect transistors (FETs) based on two - dimensional materials, but also provides a scalable solution for the integration of the entire pre - fabricated device stack array with two - dimensional materials, thus paving the way for the development of high - performance two - dimensional electronic devices. The key technical advantages include: - **Uniform growth of high - k dielectric layer**: By using liquid - metal oxides as a sacrificial layer to promote the nucleation of ALD precursors, uniform and defect - free dielectric layer growth is achieved. - **Atomically smooth interface**: Ensure that the interface between the dielectric layer and the two - dimensional material has extremely high quality, reduce the interface trap density and improve device performance. - **Realization of low - power - consumption devices**: The fabricated WS_2 top - gate transistors exhibit a subthreshold swing as low as 74.5 mV/dec, a gate leakage current density lower than 10^{-6} A/cm^2 and almost no hysteresis, meeting the requirements of low - power - consumption devices. In addition, the paper also demonstrates the application of this technology on graphene. Through a one - step method, the simultaneous transfer of metal contacts and dielectric layers is achieved, providing the possibility for the scalable integration of more complex circuits in future nanoelectronics.

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