Abstract:Two-dimensional (2D) semiconductors such as molybdenum disulfide (MoS 2 ) have attracted tremendous interest for transistor applications. However, the fabrication of 2D transistors using traditional lithography or deposition processes often causes undesired damage and contamination to the atomically thin lattices, partially degrading the device performance and leading to large variation between devices. Here we demonstrate a highly reproducible van der Waals integration process for wafer-scale fabrication of high-performance transistors and logic circuits from monolayer MoS 2 grown by chemical vapour deposition. By designing a quartz/polydimethylsiloxane semirigid stamp and adapting a standard photolithography mask-aligner for the van der Waals integration process, our strategy ensures a uniform mechanical force and a bubble-free wrinkle-free interface during the pickup/release process, which is crucial for robust van der Waals integration over a large area. Our scalable van der Waals integration process allows damage-free integration of high-quality contacts on monolayer MoS 2 at the wafer scale and enables high-performance 2D transistors. The van-der-Waals-contacted devices display an atomically clean interface with much smaller threshold variation, higher on-current, smaller off-current, larger on/off ratio and smaller subthreshold swing than those fabricated with conventional lithography. The approach is further used to create various logic gates and circuits, including inverters with a voltage gain of up to 585, and logic OR gates, NAND gates, AND gates and half-adder circuits. This scalable van der Waals integration method may be useful for reliable integration of 2D semiconductors with mature industry technology, facilitating the technological transition of 2D semiconductor electronics.

Van der Waals integration of high-κ perovskite oxides and two-dimensional semiconductors

A van der Waals pn heterojunction with organic/inorganic semiconductors

Epitaxial Integration of Transferable High-κ Dielectric and 2D Semiconductor

Scalable Integration of Hybrid High-Κ Dielectric Materials on Two-Dimensional Semiconductors

Liquid Metal Oxide-assisted Integration of High-k Dielectrics and Metal Contacts for Two-Dimensional Electronics

Two-Dimensional Layered Materials Meet Perovskite Oxides: A Combination for High-Performance Electronic Devices

Wafer-scale high-κ dielectrics for two-dimensional circuits via van der Waals integration

Combining Freestanding Ferroelectric Perovskite Oxides with Two-Dimensional Semiconductors for High Performance Transistors

Highly reproducible van der Waals integration of two-dimensional electronics on the wafer scale

Wafer-Scale Growth of Single-Crystal 2D Semiconductor on Perovskite Oxides for High-Performance Transistors.

Direct Integration of Ferroelectric Hafnium Zirconium Oxide as Top-Gate High−κ Dielectrics for Two-Dimensional Transistors

Integrating high-quality dielectrics with one-nanometer equivalent oxide thickness on two-dimensional electronic devices

Uniform and ultrathin high-κ gate dielectrics for two-dimensional electronic devices

2D Halide Perovskite-Based Van Der Waals Heterostructures: Contact Evaluation and Performance Modulation

A wafer-scale van der Waals dielectric made from an inorganic molecular crystal film

Ultrathin Van Der Waals Lanthanum Oxychloride Dielectric for Two‐Dimensional Field‐Effect Transistors

Reliable wafer-scale integration of two-dimensional materials and metal electrodes with van der Waals contacts

Ultrathin Van Der Waals Lanthanum Oxychloride Dielectric for 2D Field-Effect Transistors

Ultrahigh-Performance Optoelectronics Demonstrated in Ultrathin Perovskite-Based Vertical Semiconductor Heterostructures.