Hyperosmolar nonketotic coma in the elderly diabetic.

S. Podolsky

DOI: https://doi.org/10.1016/S0025-7125(16)31775-8

1978-07-01

Abstract:

What problem does this paper attempt to address?

Scalable Integration of Hybrid High-Κ Dielectric Materials on Two-Dimensional Semiconductors

Yongshan Xu,Teng Liu,Kailang Liu,Yinghe Zhao,Lei Liu,Penghui Li,Anmin Nie,Lixin Liu,Jun Yu,Xin Feng,Fuwei Zhuge,Huiqiao Li,Xinran Wang,Tianyou Zhai

DOI: https://doi.org/10.1038/s41563-023-01626-w

IF: 41.2

2023-01-01

Nature Materials

Abstract:Two-dimensional (2D) semiconductors are promising channel materials for next-generation field-effect transistors (FETs). However, it remains challenging to integrate ultrathin and uniform high-κ dielectrics on 2D semiconductors to fabricate FETs with large gate capacitance. We report a versatile two-step approach to integrating high-quality dielectric film with sub-1 nm equivalent oxide thickness (EOT) on 2D semiconductors. Inorganic molecular crystal Sb2O3 is homogeneously deposited on 2D semiconductors as a buffer layer, which forms a high-quality oxide-to-semiconductor interface and offers a highly hydrophilic surface, enabling the integration of high-κ dielectrics via atomic layer deposition. Using this approach, we can fabricate monolayer molybdenum disulfide-based FETs with the thinnest EOT (0.67 nm). The transistors exhibit an on/off ratio of over 106 using an ultra-low operating voltage of 0.4 V, achieving unprecedently high gating efficiency. Our results may pave the way for the application of 2D materials in low-power ultrascaling electronics. A van der Waals buffer layer of Sb2O3 enables the integration of high-κ dielectric layer with sub-1 nm equivalent oxide thickness on two-dimensional semiconductors, resulting in high performance of two-dimensional field-effect transistors.
Integrating high-quality dielectrics with one-nanometer equivalent oxide thickness on two-dimensional electronic devices

Weisheng Li,Jian Zhou,Songhua Cai,Zhihao Yu,Jialin Zhang,Nan Fang,Taotao Li,Yun Wu,Tangsheng Chen,Xiaoyu Xie,Haibo Ma,Ke Yan,Ningxuan Dai,Xiangjin Wu,Huijuan Zhao,Zixuan Wang,Daowei He,Lijia Pan,Yi Shi,Peng Wang,Wei Chen,Kosuke Nagashio,Xiangfeng Duan,Xinran Wang

DOI: https://doi.org/10.48550/arXiv.1909.09753

2019-09-21

Abstract:Two-dimensional (2D) semiconductors are widely recognized as attractive channel materials for low-power electronics. However, an unresolved challenge is the integration of high-quality, ultrathin high-\k{appa} dielectrics that fully meet the roadmap requirements for low-power applications. With a dangling-bond free surface, the deposition of dielectrics by atomic layer deposition (ALD) on 2D materials is usually characterized with non-uniform nucleation and island formation, producing a highly porous dielectric layer with serious leakage particularly at the small equivalent oxide thickness (EOT) limit. Here, we report the robust ALD of highly uniform high-\k{appa} dielectric on 2D semiconductors by using ~0.3 nm-thick exclusively monolayer molecular crystal as seeding layer. Ultrathin dielectrics down to 1 nm EOT is realized on graphene, MoS2 and WSe2, with considerably reduced roughness, density of interface states, leakage current and improved breakdown field compared to prior methods. Taking advantage of the reduced EOT, we demonstrate graphene RF transistors operating at 60 GHz, as well as MoS2 and WSe2 complementary metal-oxide-semiconductor (CMOS) transistors with Vdd =0.8 V and ideal subthreshold swing (SS) of 60 mV/dec, 20 nm-channel-length MoS2 transistors with on/off ratio over 10^7. These studies highlight that our dielectric integration method is generally applicable for different 2D materials, and compatible with top-down fabrication process on large-area chemical vapor deposited films.

Applied Physics
Integrated 2D multi-fin field-effect transistors

Mengshi Yu,Congwei Tan,Yuling Yin,Junchuan Tang,Xiaoyin Gao,Hongtao Liu,Feng Ding,Hailin Peng

DOI: https://doi.org/10.1038/s41467-024-47974-2

2024-04-29

Abstract:Vertical semiconducting fins integrated with high-κ oxide dielectrics have been at the centre of the key device architecture that has promoted advanced transistor scaling during the last decades. Single-fin channels based on two-dimensional (2D) semiconductors are expected to offer unique advantages in achieving sub-1 nm fin-width and atomically flat interfaces, resulting in superior performance and potentially high-density integration. However, multi-fin structures integrated with high-κ dielectrics are commonly required to achieve higher electrical performance and integration density. Here we report a ledge-guided epitaxy strategy for growing high-density, mono-oriented 2D Bi2O2Se fin arrays that can be used to fabricate integrated 2D multi-fin field-effect transistors. Aligned substrate steps enabled precise control of both nucleation sites and orientation of 2D fin arrays. Multi-channel 2D fin field-effect transistors based on epitaxially integrated 2D Bi2O2Se/Bi2SeO5 fin-oxide heterostructures were fabricated, exhibiting an on/off current ratio greater than 106, high on-state current, low off-state current, and high durability. 2D multi-fin channel arrays integrated with high-κ oxide dielectrics offer a strategy to improve the device performance and integration density in ultrascaled 2D electronics.
Wafer-scale high-κ dielectrics for two-dimensional circuits via van der Waals integration

Zheyi Lu,Yang Chen,Weiqi Dang,Lingan Kong,Quanyang Tao,Likuan Ma,Donglin Lu,Liting Liu,Wanying Li,Zhiwei Li,Xiao Liu,Yiliu Wang,Xidong Duan,Lei Liao,Yuan Liu

DOI: https://doi.org/10.1038/s41467-023-37887-x

IF: 16.6

2023-04-25

Nature Communications

Abstract:The practical application of two-dimensional (2D) semiconductors for high-performance electronics requires the integration with large-scale and high-quality dielectrics—which however have been challenging to deposit to date, owing to their dangling-bonds-free surface. Here, we report a dry dielectric integration strategy that enables the transfer of wafer-scale and high-κ dielectrics on top of 2D semiconductors. By utilizing an ultra-thin buffer layer, sub-3 nm thin Al 2 O 3 or HfO 2 dielectrics could be pre-deposited and then mechanically dry-transferred on top of MoS 2 monolayers. The transferred ultra-thin dielectric film could retain wafer-scale flatness and uniformity without any cracks, demonstrating a capacitance up to 2.8 μF/cm 2 , equivalent oxide thickness down to 1.2 nm, and leakage currents of ~10 −7 A/cm 2 . The fabricated top-gate MoS 2 transistors showed intrinsic properties without doping effects, exhibiting on-off ratios of ~10 7 , subthreshold swing down to 68 mV/dec, and lowest interface states of 7.6×10 9 cm −2 eV −1 . We also show that the scalable top-gate arrays can be used to construct functional logic gates. Our study provides a feasible route towards the vdW integration of high-κ dielectric films using an industry-compatible ALD process with well-controlled thickness, uniformity and scalability.

multidisciplinary sciences
Wafer-Scale Growth of Single-Crystal 2D Semiconductor on Perovskite Oxides for High-Performance Transistors

Congwei Tan,Min Tang,Jinxiong Wu,Yinan Liu,Tianran Li,Yan Liang,Bing Deng,Zhenjun Tan,Teng Tu,Yichi Zhang,Cong Liu,Jian-Hao Chen,Yong Wang,Hailin Peng

DOI: https://doi.org/10.1021/acs.nanolett.9b00381

IF: 10.8

2019-01-01

Nano Letters

Abstract:Emerging two-dimensional (2D) semiconducting materials serve as promising alternatives for next-generation digital electronics and optoelectronics. However, large-scale 2D semiconductor films synthesized so far are typically polycrystalline with defective grain boundaries that could degrade their performance. Here, for the first time, wafer-size growth of a single-crystal Bi2O2Se film, which is a novel air-stable 2D semiconductor with high mobility, was achieved on insulating perovskite oxide substrates [SrTiO3, LaAlO3, (La, Sr)(Al, Ta)O-3]. The layered Bi2O2Se epilayer exhibits perfect lattice matching and strong interaction with perovskite oxide substrates, which enable unidirectional alignment and seamless mergence of multiple seeds into single-crystal continuous films free of detrimental grain boundaries. The single-crystal Bi2O2Se thin films show excellent spatial homogeneity over the entire wafer and allow for the batch fabrication of high-performance field-effect devices with high mobilities of similar to 150 cm(2) V-1 s(-1) at room temperature, excellent switching behavior with large on/off ratio of >10(5), and high drive current of similar to 45 mu A mu m(-1) at a channel length of similar to 5 mu m. Our work makes a step toward the practical applications of high-mobility semiconducting 2D layered materials and provides an alternative platform of oxide heterostructure to investigate novel physical phenomena.
A native oxide high-kappa gate dielectric for two-dimensional electronics

Tianran Li,Teng Tu,Yuanwei Sun,Huixia Fu,Jia Yu,Lei Xing,Ziang Wang,Huimin Wang,Rundong Jia,Jinxiong Wu,Congwei Tan,Yan Liang,Yichi Zhang,Congcong Zhang,Yumin Dai,Chenguang Qiu,Ming Li,Ru Huang,Liying Jiao,Keji Lai,Binghai Yan,Peng Gao,Hailin Peng

DOI: https://doi.org/10.1038/s41928-020-0444-6

IF: 33.255

2020-01-01

Nature Electronics

Abstract:Silicon-based transistors are approaching their physical limits and thus new high-mobility semiconductors are sought to replace silicon in the microelectronics industry. Both bulk materials (such as silicon-germanium and III-V semiconductors) and low-dimensional nanomaterials (such as one-dimensional carbon nanotubes and two-dimensional transition metal dichalcogenides) have been explored, but, unlike silicon, which uses silicon dioxide (SiO2) as its gate dielectric, these materials suffer from the absence of a high-quality native oxide as a dielectric counterpart. This can lead to compatibility problems in practical devices. Here, we show that an atomically thin gate dielectric of bismuth selenite (Bi2SeO5) can be conformally formed via layer-by-layer oxidization of an underlying high-mobility two-dimensional semiconductor, Bi2O2Se. Using this native oxide dielectric, high-performance Bi2O2Se field-effect transistors can be created, as well as inverter circuits that exhibit a large voltage gain (as high as 150). The high dielectric constant (similar to 21) of Bi2SeO5 allows its equivalent oxide thickness to be reduced to 0.9 nm while maintaining a gate leakage lower than thermal SiO2. The Bi2SeO5 can also be selectively etched away by a wet chemical method that leaves the mobility of the underlying Bi2O2Se semiconductor almost unchanged.
Reliability of Ultrathin High-κ Dielectrics on Chemical-vapor Deposited 2D Semiconductors

Zhihao Yu,Hongkai Ning,Chao-Ching Cheng,Weisheng Li,Lei Liu,Wanqing Meng,Zhongzhong Luo,Taotao Li,Songhua Cai,Peng Wang,Wen-Hao Chang,Chao-Hsin Chien,Yi Shi,Yong Xu,Lain-Jong Li,Xinran Wang

DOI: https://doi.org/10.1109/iedm13553.2020.9371917

2020-01-01

Abstract:2D semiconductors are considered to be one of the most promising channel materials to extend transistor scaling. However, the integration of ultra-thin dielectrics on 2D semiconductors has been challenging, and the reliability has not been investigated to date. Here, using monolayer 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) molecules as interface layer, we realize EOT as low as 1.7 nm on large-area monolayer CVD MoS2. The reliability of ultrathin high-κ dielectric on 2D semiconductors is systematically studied for the first time. The median breakdown (BD) field of HfO2/PTCDA stack is over 8.42 MV/cm, which is two times that of HfO2/Si under the same EOT. Through TDDB we project that the gate dielectric can work reliably for 10 years under EBD = 6.5 MV/cm, which shows 85% improvement than HfO2/Si. The BD current increase rate in our gate stack is several orders of magnitude smaller than HfO2/Si. The excellent reliability suggests that molecular interfacial layer is a promising dielectric technology for 2D electronics.
Van der Waals integration of high-κ perovskite oxides and two-dimensional semiconductors

Allen Jian Yang,Kun Han,Ke Huang,Chen Ye,Wen Wen,Ruixue Zhu,Rui Zhu,Jun Xu,Ting Yu,Peng Gao,Qihua Xiong,X. Renshaw Wang

DOI: https://doi.org/10.1038/s41928-022-00753-7

IF: 33.255

2022-04-01

Nature Electronics

Abstract:Abstract Two-dimensional semiconductors can be used to build next-generation electronic devices with ultrascaled channel lengths. However, semiconductors need to be integrated with high-quality dielectrics—which are challenging to deposit. Here we show that single-crystal strontium titanate—a high- κ perovskite oxide—can be integrated with two-dimensional semiconductors using van der Waals forces. Strontium titanate thin films are grown on a sacrificial layer, lifted off and then transferred onto molybdenum disulfide and tungsten diselenide to make n-type and p-type transistors, respectively. The molybdenum disulfide transistors exhibit an on/off current ratio of 10 8 at a supply voltage of 1 V and a minimum subthreshold swing of 66 mV dec −1 . We also show that the devices can be used to create low-power complementary metal–oxide–semiconductor inverter circuits.

engineering, electrical & electronic
A Single-Crystalline Native Dielectric for Two-Dimensional Semiconductors with an Equivalent Oxide Thickness below 0.5 Nm

Yichi Zhang,Jia Yu,Ruixue Zhu,Mengdi Wang,Congwei Tan,Teng Tu,Xuehan Zhou,Congcong Zhang,Mengshi Yu,Xiaoyin Gao,Yufei Wang,Hongtao Liu,Peng Gao,Keji Lai,Hailin Peng

DOI: https://doi.org/10.1038/s41928-022-00824-9

IF: 33.255

2022-01-01

Nature Electronics

Abstract:Scaling down the size of field-effect transistors in integrated circuits leads to higher speed, lower power consumption and increased integration density, but also results in short-channel effects. Transistors made using high-mobility two-dimensional (2D) semiconductor channels and ultrathin high- κ dielectrics can suppress this effect. However, it is difficult to integrate 2D semiconductors with dielectric layers that have an equivalent oxide thickness below 0.5 nm and low leakage current. Here we report the wafer-scale synthesis of β-Bi 2 SeO 5 —a single-crystalline native oxide with a dielectric constant of around 22—via the lithography-compatible ultraviolet-assisted intercalative oxidation of the high-mobility 2D semiconductor Bi 2 O 2 Se. We use the approach to create top-gated 2D transistors with sub-0.5-nm-equivalent-oxide-thickness dielectrics that exhibit leakage current below the low-power limit of 0.015 A cm −2 at a gate voltage of 1 V.
Single-crystalline van der Waals layered dielectric with high dielectric constant

Congcong Zhang,Teng Tu,Jingyue Wang,Yongchao Zhu,Congwei Tan,Liang Chen,Mei Wu,Ruixue Zhu,Yizhou Liu,Huixia Fu,Jia Yu,Yichi Zhang,Xuzhong Cong,Xuehan Zhou,Jiaji Zhao,Tianran Li,Zhimin Liao,Xiaosong Wu,Keji Lai,Binghai Yan,Peng Gao,Qianqian Huang,Hai Xu,Huiping Hu,Hongtao Liu,Jianbo Yin,Hailin Peng

DOI: https://doi.org/10.1038/s41563-023-01502-7

IF: 41.2

2023-03-10

Nature Materials

Abstract:The scaling of silicon-based transistors at sub-ten-nanometre technology nodes faces challenges such as interface imperfection and gate current leakage for an ultrathin silicon channel 1,2 . For next-generation nanoelectronics, high-mobility two-dimensional (2D) layered semiconductors with an atomic thickness and dangling-bond-free surfaces are expected as channel materials to achieve smaller channel sizes, less interfacial scattering and more efficient gate-field penetration 1,2 . However, further progress towards 2D electronics is hindered by factors such as the lack of a high dielectric constant ( κ ) dielectric with an atomically flat and dangling-bond-free surface 3,4 . Here, we report a facile synthesis of a single-crystalline high- κ ( κ of roughly 16.5) van der Waals layered dielectric Bi 2 SeO 5 . The centimetre-scale single crystal of Bi 2 SeO 5 can be efficiently exfoliated to an atomically flat nanosheet as large as 250 × 200 μm 2 and as thin as monolayer. With these Bi 2 SeO 5 nanosheets as dielectric and encapsulation layers, 2D materials such as Bi 2 O 2 Se, MoS 2 and graphene show improved electronic performances. For example, in 2D Bi 2 O 2 Se, the quantum Hall effect is observed and the carrier mobility reaches 470,000 cm 2 V −1 s −1 at 1.8 K. Our finding expands the realm of dielectric and opens up a new possibility for lowering the gate voltage and power consumption in 2D electronics and integrated circuits.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter
Direct Integration of Ferroelectric Hafnium Zirconium Oxide as Top-Gate High−κ Dielectrics for Two-Dimensional Transistors

Yen-Fu Lin,Che-Yi Lin,Bo-Cia Chen,Yu-Chen Liu,Shang-Fu Kuo,Hsien-Chi Tsai,Yuan-Ming Chang,Chang-Yang Kuo,Chun-Fu Chang,Jyun-Hong Chen,Ying-Hao Chu,Mahito Yamamoto,Chang-Hong Shen,Yu-Lun Chueh,Po-Wen Chiu,Yi-Chun Chen,Jan-Chi Yang

DOI: https://doi.org/10.21203/rs.3.rs-4326620/v1

2024-01-01

Abstract:Abstract Transistor miniaturization enables integrating billions on a chip but also introduces heat and mobility issues. Two-dimensional (2D) semiconductors, with their ultrathin nature, offer a promising solution to achieving superior gate control. However, the lack of insulators suitable for integration into fully scalable 2D process flows limits their practical use. Here, we report the integration of freestanding Hf0.5Zr0.5O2 (HZO) membranes as top-gate high-κ dielectrics in conjunction with 2D semiconductors. The HZO dielectrics exhibit classic ferroelectric feature, boasting high dielectric constant (~ 19.5), along with low leakage current (< 2.6×10− 6 A cm− 2 at 1 MV cm− 1). Capitalizing on these advantages, we fabricate molybdenum disulfide (MoS2) transistors with HZO dielectrics, achieving an on/off ratio of 109 and a subthreshold swing of 53 mV dec− 1. Additionally, we demonstrate HZO-gated 2D transistors’s capability to implement inverter, NAND, NOR, AND, OR, XOR, XNOR logic functions and a 1-bit full adder. Finally, we create a MoS2 transistor with a channel length of ~ 13 nm, exhibiting an on/off of over 108 and SS of 70 mV dec− 1. The successful integration of ferroelectric, high-κ HZO as a top gate material effectively addresses current challenges and paves the way for the advancement of 3D integrated circuits utilizing 2D materials.
Reliable wafer-scale integration of two-dimensional materials and metal electrodes with van der Waals contacts

Xiaodong Zhang,Chenxi Huang,Zeyu Li,Jun Fu,Jiaran Tian,Zhuping Ouyang,Yuliang Yang,Xiang Shao,Yulei Han,Zhenhua Qiao,Hualing Zeng

DOI: https://doi.org/10.1038/s41467-024-49058-7

IF: 16.6

2024-05-30

Nature Communications

Abstract:Abstract Since the first report on single-layer MoS 2 based transistor, rapid progress has been achieved in two-dimensional (2D) material-based atomically thin electronics, providing an alternative approach to solve the bottleneck in silicon device miniaturization. In this scenario, reliable contact between the metal electrodes and the subnanometer-thick 2D materials becomes crucial in determining the device performance. Here, utilizing the quasi-van der Waals (vdW) epitaxy of metals on fluorophlogopite mica, we demonstrate an all-stacking method for the fabrication of 2D devices with high-quality vdW contacts by mechanically transferring pre-deposited metal electrodes. This technique is applicable for complex device integration with sizes up to the wafer scale and is also capable of tuning the electric characteristics of the interfacial junctions by transferring selective metals. Our results provide an efficient, scalable, and low-cost technique for 2D electronics, allowing high-density device integration as well as a handy tool for fundamental research in vdW materials.

multidisciplinary sciences
Uniform and ultrathin high-κ gate dielectrics for two-dimensional electronic devices

Weisheng Li,Jian Zhou,Songhua Cai,Zhihao Yu,Jialin Zhang,Nan Fang,Taotao Li,Yun Wu,Tangsheng Chen,Xiaoyu Xie,Haibo Ma,Ke Yan,Ningxuan Dai,Xiangjin Wu,Huijuan Zhao,Zixuan Wang,Daowei He,Lijia Pan,Yi Shi,Peng Wang,Wei Chen,Kosuke Nagashio,Xiangfeng Duan,Xinran Wang

DOI: https://doi.org/10.1038/s41928-019-0334-y

IF: 33.255

2019-12-01

Nature Electronics

Abstract:Two-dimensional semiconductors could be used as a channel material in low-power transistors, but the deposition of high-quality, ultrathin high-κ dielectrics on such materials has proved challenging. In particular, atomic layer deposition typically leads to non-uniform nucleation and island formation, creating a porous dielectric layer that suffers from current leakage, particularly when the equivalent oxide thickness is small. Here, we report the atomic layer deposition of high-κ gate dielectrics on two-dimensional semiconductors using a monolayer molecular crystal as a seeding layer. The approach can be used to grow dielectrics with an equivalent oxide thickness of 1 nm on graphene, molybdenum disulfide (MoS2) and tungsten diselenide (WSe2). Compared with dielectrics created using established methods, our dielectrics exhibit a reduced roughness, density of interface states and leakage current, as well as an improved breakdown field. With the technique, we fabricate graphene radio-frequency transistors that operate at 60 GHz, and MoS2 and WSe2 complementary metal–oxide–semiconductor transistors with a supply voltage of 0.8 V and subthreshold swing down to 60 mV dec−1. We also create MoS2 transistors with a channel length of 20 nm, which exhibit an on/off ratio of over 107. Using a monolayer molecular crystal as a seeding layer, hafnium oxide dielectrics with an equivalent oxide thickness of only 1 nm can be deposited on graphene, molybdenum disulfide and tungsten diselenide.

engineering, electrical & electronic
Liquid Metal Oxide-assisted Integration of High-k Dielectrics and Metal Contacts for Two-Dimensional Electronics

Dasari Venkatakrishnarao,Abhishek Mishra,Yaoju Tarn,Michel Bosman,Rainer Lee,Sarthak Das,Subhrajit Mukherjee,Teymour Talha-Dean,Yiyu Zhang,Siew Lang Teo,Jian Wei Chai,Fabio Bussolotti,Kuan Eng Johnson Goh,Chit Siong Lau

DOI: https://doi.org/10.1021/acsnano.4c08554

2024-09-19

Abstract:Two-dimensional van der Waals semiconductors are promising for future nanoelectronics. However, integrating high-k gate dielectrics for device applications is challenging as the inert van der Waals material surfaces hinder uniform dielectric growth. Here, we report a liquid metal oxide-assisted approach to integrate ultrathin, high-k HfO2 dielectric on 2D semiconductors with atomically smooth interfaces. Using this approach, we fabricated 2D WS2 top-gated transistors with subthreshold swings down to 74.5 mV/dec, gate leakage current density below 10-6 A/cm2, and negligible hysteresis. We further demonstrate a one-step van der Waals integration of contacts and dielectrics on graphene. This can offer a scalable approach toward integrating entire prefabricated device stack arrays with 2D materials. Our work provides a scalable solution to address the crucial dielectric engineering challenge for 2D semiconductors, paving the way for high-performance 2D electronics.

Materials Science,Mesoscale and Nanoscale Physics,Applied Physics
Uniform High-k Amorphous Native Oxide Synthesized by Oxygen Plasma for Top-Gated Transistors

Teng Tu,Yichi Zhang,Tianran Li,Jia Yu,Lingmei Liu,Jinxiong Wu,Congwei Tan,Jilin Tang,Yan Liang,Congcong Zhang,Yumin Dai,Yu Han,Keji Lai,Hailin Peng

DOI: https://doi.org/10.1021/acs.nanolett.0c02951

IF: 10.8

2020-09-03

Nano Letters

Abstract:The integration of high-k gate dielectrics with two-dimensional (2D) semiconducting channel materials is essential for high-performance and low-power electronics. However, the conformal deposition of a uniform high-k dielectric with sub-1 nm equivalent oxide thickness (EOT) and high interface quality on high-mobility 2D semiconductors is still challenging. Here, we report a facile approach to synthesize a uniform high-k (εr ∼ 22) amorphous native oxide Bi2SeOx on the high-mobility 2D semiconducting Bi2O2Se using O2 plasma at room temperature. The conformal native oxide can directly serve as gate dielectrics with EOT of ∼0.9 nm, while the original properties of underlying 2D Bi2O2Se is preserved. Furthermore, high-resolution area-selective oxidation of Bi2O2Se is achieved to fabricate discrete electronic components. This facile integration of a high-mobility 2D semiconductor and its high-k native oxide holds high promise for next-generation nanoelectronics.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acs.nanolett.0c02951?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acs.nanolett.0c02951</a>.Experimental details and supplementary figures (<a class="ext-link" href="/doi/suppl/10.1021/acs.nanolett.0c02951/suppl_file/nl0c02951_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
2D Bi2O2Se: an Emerging Material Platform for the Next-Generation Electronic Industry

Tianran Li,Hailin Peng

DOI: https://doi.org/10.1021/accountsmr.1c00130

2021-01-01

Accounts of Materials Research

Abstract:Silicon has been the dominant semiconductor for the microelectronics industry since the late 1950s. Following Moore's law, silicon-based integrated circuit (IC) technology evolved into a 5 nm node by the end of 2020. However, silicon-based electronics face various challenges such as reduced carrier mobility and increased short-channel effects at sub-10 nm nodes. To overcome these drawbacks, two-dimensional (2D) semiconductors are among the most competitive candidate materials for next-generation electronics, due to their intrinsic atomic thickness, flexibility, and dangling-bond-free surfaces. Among all the 2D semiconductors, an air-stable and high-mobility 2D Bi2O2Se semiconductor, a novel ternary material, has some prominent advantages that make it particularly favorable in the electronics industry. First, it demonstrates ultrahigh carrier mobility, moderate band gap, outstanding stability, and excellent mechanical properties. Second, it can react with oxygen plasma or oxygen at elevated temperatures to form a high-kappa native oxide Bi2SeO5. The native oxide Bi2SeO5 forms an atomically sharp interface with Bi2O2Se and can directly serve as a gate dielectric. Bi2O2Se is also embodied with some interesting physical properties such as strong spin-orbit coupling, dimerized selenium vacancies, and ferroelectricity. Taking advantage of these properties, researchers have fabricated high-performance electronic devices, including logic devices, optoelectronics, thermoelectrics, sensors, and memory devices. In this account, we will systematically review the structure of 2D Bi2O2Se, including its crystal structure, surface structure, point defects, and electronic band structure and how these structures can affect the electron transport in 2D Bi2O2Se. We will then discuss different approaches to synthesize this material including chemical vapor deposition (CVD), metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), and the solution-assisted method. All these methods show great potential in large-scale production. Third, we will discuss how the structure of Bi2O2 Se affects its chemical and physical properties such as chemical reactivity and ferroelectric, piezoelectric, and electromechanical properties. Fourth, we will talk about how to make use of these properties in electronic devices, including field-effect transistors, logic gates, bolometers, photodetectors, thermoelectrics, piezoelectrics, sensors, and memory devices. Finally, we will put forward our idea on how to pattern large-area Bi2O2Se thin films into isolated channel regions and integrate these devices together into full-functioning circuits. We believe that 2D Bi2O2Se is a promising semiconductor, as a great diversity of high-performance 2D Bi2O2Se-based devices have demonstrated. Hopefully, the unique characteristics of 2D Bi2O2Se can provide additional opportunities to complement or replace silicon as the material platform of the next-generation electronics industry. To fill the gap between dreams and reality, there is still much work to be done, especially in large-scale material synthesis and systematic device integration.
Ultimate dielectric scaling of 2D transistors via van der Waals metal integration

Weiqi Dang,Bei Zhao,Chang Liu,Xiangdong Yang,Lingan Kong,Zheyi Lu,Bo Li,Jia Li,Hongmei Zhang,Wanying Li,Shun Shi,Ziyue Qin,Lei Liao,Xidong Duan,Yuan Liu

DOI: https://doi.org/10.1007/s12274-021-3708-1

IF: 9.9

2021-08-05

Nano Research

Abstract:The two-dimensional transition metal dichalcogenides (TMDs) have attracted intense interest as an atomically thin semiconductor channel for the continued transistor scaling. However, with a dangling bond free surface, it has been a key challenge to reliably integrate high-quality gate dielectrics on TMDs. In particular, the atomic layer deposition of dielectrics on TMDs typically features highly non-uniform nucleation and produces a highly rough or porous dielectric film with rich pinholes that are prone to further damage during the gate integration process. Herein we report a van der Waals (vdW) integration route towards highly reliable gate metal integration on porous dielectrics. The physical lamination process employed by the vdW integration avoids the direct deposition of metal electrodes into porous dielectrics to ensure reliable gate integration and produce low gate leakage devices. The electrical measurements demonstrate the vdW integrated MoS2 top gate devices exhibit substantially reduced gate leakage current that is about 3–5 orders of magnitude smaller than that with deposited metal electrodes. Furthermore, we show the vdW integration process can be used to create high performance top-gated MoS2 transistors with ultrathin Al2O3 dielectrics down to 1 nm, representing the ultimate dielectric scaling for TMDs transistors. This study demonstrates that vdW integration can enable highly reliable gate integration on relatively low quality dielectrics on TMDs, and opens an interesting pathway to high-performance top-gate transistors using dangling bond free two-dimensional (2D) semiconductors.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
Heteroepitaxy of Semiconducting 2H-Mote2 Thin Films on Arbitrary Surfaces for Large-Scale Heterogeneous Integration

Yu Pan,Roger Guzman,Siheng Li,Wanjin Xu,Yanping Li,Ning Tang,Huaxiang Yin,Jun He,Aimin Wu,Ji Chen,Wu Zhou,Xiaolong Xu,Yu Ye

DOI: https://doi.org/10.1038/s44160-022-00134-0

2022-01-01

Nature Synthesis

Abstract:The integration of two-dimensional semiconductors and arbitrary materials or architectures offers the possibility to enhance the functionality of a material and improve device performance. However, the traditional vertical epitaxy process requires a lattice-matched planar substrate, which limits the scope of heterogeneous integration. Bottom-up heteroepitaxial growth of single-crystal thin films on arbitrary materials with a large lattice mismatch typically results in highly defective interfaces. Here we report a general synthesis route for heteroepitaxial growth of semiconducting 2H-MoTe 2 films on arbitrary substrates with different crystal symmetries, lattice constants and three-dimensional architectures, which overcomes the limitation of the substrate. The in-plane two-dimensional epitaxy process through phase transition enables the direct synthesis of single-crystal semiconducting 2H-MoTe 2 films on arbitrary single-crystal substrates (including silicon, GaN, 4H-SiC, sapphire, SrTiO 3 and Gd 3 Ga 5 O 12 ) and three-dimensional architectures without the limitation of lattice matching and a planar surface. This heteroepitaxial method provides a way of heterogeneous integration of semiconducting 2H-MoTe 2 films with other functional materials or architectures for the fabrication of integrated devices.
Simultaneous synthesis and integration of two-dimensional electronic components

Qi Zhang,Xue-Feng Wang,Shu-Hong Shen,Qi Lu,Xiaozhi Liu,Haoyi Li,Jingying Zheng,Chu-Ping Yu,Xiaoyan Zhong,Lin Gu,Tian-Ling Ren,Liying Jiao

DOI: https://doi.org/10.1038/s41928-019-0233-2

IF: 33.255

2019-04-01

Nature Electronics

Abstract:Two-dimensional (2D) materials such as transition metal chalcogenides can be used to create different components of electronic devices, including semiconducting channels and metallic electrodes and interconnects. However, devices are typically fabricated using a step-by-step process that can introduce defects and impurities, leading to a reduction in device performance. Here we show that 2D electronic components can be chemically synthesized and integrated simultaneously in a single step, creating 2D devices in which each component in the active layer is connected via covalent bonds instead of physical interfaces. The approach involves the phase-patterned growth of atomic layers, and, using 2D molybdenum ditelluride (MoTe2) as the active material, we show that it can be used to construct high-performance field-effect transistors (FETs) and arrays of logic devices. We also use the technique to construct FETs with ultrashort gate lengths, bilayered FETs with vertical interconnections and flexible devices.

engineering, electrical & electronic
Two-dimensional layered materials meet perovskite oxides: A combination for high-performance electronic devices

Allen Jian Yang,Su-Xi Wang,Jianwei Xu,Xian Jun Loh,Qiang Zhu,Xiao Renshaw Wang

DOI: https://doi.org/10.1021/acsnano.3c00429

2023-05-12

Abstract:As the Si-based transistors scale down to atomic dimensions, the basic principle of current electronics, which heavily relies on the tunable charge degree of freedom, faces increasing challenges to meet the future requirements of speed, switching energy, heat dissipation, packing density as well as functionalities. Heterogeneous integration, where dissimilar layers of materials and functionalities are unrestrictedly stacked at an atomic scale, is appealing to next-generation electronics, such as multi-functional, neuromorphic, spintronic and ultra-low power devices, because it unlocks technologically useful interfaces of distinct functionalities. Recently, the combination of functional perovskite oxides and the two-dimensional layered materials (2DLMs) led to unexpected functionalities and enhanced device performance. In this review, we review the recent progress of the heterogeneous integration of perovskite oxides and 2DLMs from the perspectives of fabrication and interfacial properties, electronic applications, challenges as well as outlooks. In particular, we focus on three types of attractive applications, namely field-effect transistors, memory, and neuromorphic electronics. The van der Waals integration approach is extendible to other oxides and 2DLMs, leading to almost unlimited combinations of oxides and 2DLMs and contributing to future high-performance electronic and spintronic devices.

Materials Science,Mesoscale and Nanoscale Physics,Applied Physics

Hyperosmolar nonketotic coma in the elderly diabetic.

Scalable Integration of Hybrid High-Κ Dielectric Materials on Two-Dimensional Semiconductors

Integrating high-quality dielectrics with one-nanometer equivalent oxide thickness on two-dimensional electronic devices

Integrated 2D multi-fin field-effect transistors

Wafer-scale high-κ dielectrics for two-dimensional circuits via van der Waals integration

Wafer-Scale Growth of Single-Crystal 2D Semiconductor on Perovskite Oxides for High-Performance Transistors

A native oxide high-kappa gate dielectric for two-dimensional electronics

Reliability of Ultrathin High-κ Dielectrics on Chemical-vapor Deposited 2D Semiconductors

Van der Waals integration of high-κ perovskite oxides and two-dimensional semiconductors

A Single-Crystalline Native Dielectric for Two-Dimensional Semiconductors with an Equivalent Oxide Thickness below 0.5 Nm

Single-crystalline van der Waals layered dielectric with high dielectric constant

Direct Integration of Ferroelectric Hafnium Zirconium Oxide as Top-Gate High−κ Dielectrics for Two-Dimensional Transistors

Reliable wafer-scale integration of two-dimensional materials and metal electrodes with van der Waals contacts

Uniform and ultrathin high-κ gate dielectrics for two-dimensional electronic devices

Liquid Metal Oxide-assisted Integration of High-k Dielectrics and Metal Contacts for Two-Dimensional Electronics

Uniform High-k Amorphous Native Oxide Synthesized by Oxygen Plasma for Top-Gated Transistors

2D Bi2O2Se: an Emerging Material Platform for the Next-Generation Electronic Industry

Ultimate dielectric scaling of 2D transistors via van der Waals metal integration

Heteroepitaxy of Semiconducting 2H-Mote2 Thin Films on Arbitrary Surfaces for Large-Scale Heterogeneous Integration

Simultaneous synthesis and integration of two-dimensional electronic components

Two-dimensional layered materials meet perovskite oxides: A combination for high-performance electronic devices