Abstract:Transition metal dichalcogenides (TMDCs) are promising high performance electronic materials due to their interesting semiconductor properties. However, it is acknowledged that the effective electrical contact between TMDCs-layered materials and metals remains one of the major challenges. In this work, the homogeneous monolayer MoS2 films with high crystalline quality were prepared by chemical vapor deposition method on SiO2/Si substrates. The back-gate field-effect transistors (FETs) were fabricated by inserting an ultrathin Al2O3 interlayer between the metal electrodes and MoS2 nanosheets. With the addition of an ultrathin 0.8 nm Al2O3 interlayer, the contact resistance decreased dramatically from 59.9 to 1.3 kΩ μm and the Schottky barrier height (SBH) dropped from 102 to 27 meV compared with devices without the Al2O3 interlayer. At the same time, the switching ratio increased from ∼106 to ∼108, and both the on-current and field-effect mobility were greatly improved. We find that the ultrathin Al2O3 interlayer can not only reduce the SBH to alleviate the Fermi level pinning phenomenon at the interface, but also protect the channel materials from the influence of air and moisture as a covering layer. In addition, the lattice and band structures of Al2O3/MoS2 film were calculated and analyzed by first-principles calculation. It is found that the total density of states of the Al2O3/MoS2 film exhibits interfacial polarized metals property, which proves the higher carrier transport characteristics. FETs with Al2O3 interlayers have excellent stability and repeatability, which can provide effective references for future low power and high performance electronic devices.

High performance bilayer MoTe2 transistors with co-sputtered ternary HfAlO2 high-k dielectric

Improved Device Performance of MoTe2 Nanoribbon Transistors with Solution-processed Ternary HfAlOx High-k Dielectric

High‐Performance and Low‐Power Polycrystalline MoTe2 Thin Film Transistors with Solution‐Processed Ternary Oxide High‐k Dielectric

High‐Performance and Low‐Power Polycrystalline MoTe 2 Thin Film Transistors with Solution‐Processed Ternary Oxide High‐k Dielectric

Effect of Dielectric Interface on the Performance of MoS2 Transistors.

Monolayer MoS2-based Transistors with Low Contact Resistance by Inserting Ultrathin Al2O3 Interfacial Layer

Near-Ideal Subthreshold Swing Mos2 Back-Gate Transistors With An Optimized Ultrathin Hfo2 Dielectric Layer

High‐Performance Large‐Scale Vertical 1T'/2H Homojunction CVD‐Grown Polycrystalline MoTe2 Transistors

High‐Performance Large‐Scale Vertical 1T'/2H Homojunction CVD‐Grown Polycrystalline MoTe 2 Transistors

Janus Electronic Devices with Ultrathin High-κ Gate Dielectric Directly Integrated on 1T'-MoTe 2

Performance and stability improvement of CVD monolayer MoS2 transistors through HfO2 dielectrics engineering

Improved Performance of MoS2 FETs using AlN/Al2 O3 dielectric and Plasma Enhanced Atomic Layer Deposition (PEALD)

Ternary MoSe2xTe2-2x Alloy with Tunable Band Gap for Electronic and Optoelectronic Transistors.

Enhanced Photoresponsivity and Hole Mobility of MoTe2 Phototransistors by Using an Al2O3 High-Κ Gate Dielectric

Reduced Schottky barrier height at metal/CVD-grown MoTe<sub>2</sub> interface

Reduced Schottky Barrier Height at Metal/cvd-Grown MoTe2 Interface

Single-crystalline metal-oxide dielectrics for top-gate 2D transistors

Monolayer Molybdenum Disulfide Transistors with Single-Atom-Thick Gates.

High-Performance and Low-Power Transistors Based on Anisotropic Monolayer Β - TeO2

High Performance Few-Layer MoS2 Transistor Arrays with Wafer Level Homogeneity Integrated by Atomic Layer Deposition

Electrical performance of multilayer MoS2 transistors on high-κ Al2O3 coated Si substrates