Abstract:Because of atomic thickness and non-zero band gap, two-dimensional (2D) transition-metal dichalcogenides (TMDCs) have become promising candidates for post-silicon nanoelectronic materials. In the process of realizing 2D electronic devices for scaling down modern integrated circuitry, contact engineering suitable for large-scale manufacturing is crucial, but it remains elusive. Here, we demonstrated the large-scale chemical assembly of van der Waals heterostructures, with metallic 1T′-MoTe2 on top of semiconducting 2H-MoTe2, via a spatial-controlled phase-engineered growth method. Based on the heterophase structure, a large-scale field-effect transistor (FET) array was fabricated, in which 1T′-MoTe2 was used as the contact electrode and 2H-MoTe2 was used as the semiconducting channel. The vertical nanosheet-based heterophase FET exhibits ohmic contact behavior with distinctively low contact resistance. A total of 120 FETs were measured, and the measured average field-effect mobility was as high as 15 cm2 V–1 s–1 (comparable to that of exfoliated single-crystalline 2H-MoTe2). The superior electrical properties are attributed to the atomic clean interface that leads to an ideal contact between top 1T′- and bottom 2H-MoTe2. This spatially controlled large-scale chemical assembly of vertical 2D metal–semiconductor heterostructures with low contact resistance provides a new route toward the practical application of high-performance electronic and optoelectronic devices based on the atomically thin TMDCs.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsanm.0c02302?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsanm.0c02302</a>.AFM measurement of 2H-MoTe2 film; patterned growth of 1T′-MoTe2; transfer of the 1T′/2H/1T′ MoTe2 heterophase array; TEM characterization of the 1T′-MoTe2 region and the 1T′/2H MoTe2 heterophase region; metal/2H-MoTe2 contact for comparison; detailed calculation and results for field-effect mobility; resistance of metal/1T′-MoTe2 contact; band diagram comparison of the vertical contact and in-plane contact; and comparison with other reported works (<a class="ext-link" href="/doi/suppl/10.1021/acsanm.0c02302/suppl_file/an0c02302_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

High‐Performance Large‐Scale Vertical 1T'/2H Homojunction CVD‐Grown Polycrystalline MoTe 2 Transistors

High‐Performance Large‐Scale Vertical 1T'/2H Homojunction CVD‐Grown Polycrystalline MoTe2 Transistors

Large-Scale Vertical 1T′/2H MoTe 2 Nanosheet-Based Heterostructures for Low Contact Resistance Transistors

High mobility top gated field-effect transistors and integrated circuits based on chemical vapor deposition-derived monolayer MoS 2

Large-Scale Vertical 1T′/2H MoTe2 Nanosheet-Based Heterostructures for Low Contact Resistance Transistors

High-Performance Wafer-Scale MoS2 Transistors Toward Practical Application

Large‐Scale N‐Type FET and Homogeneous CMOS Inverter Array Based on Few‐Layer MoTe2

High‐Performance and Low‐Power Polycrystalline MoTe2 Thin Film Transistors with Solution‐Processed Ternary Oxide High‐k Dielectric

Scaling-up Atomically Thin Coplanar Semiconductor-Metal Circuitry via Phase Engineered Chemical Assembly

Large Area, Phase-Controlled Growth of Few-Layer, Two-Dimensional MoTe2and Lateral 1T′–2H Heterostructures by Chemical Vapor Deposition

High Performance Few-Layer MoS2 Transistor Arrays with Wafer Level Homogeneity Integrated by Atomic Layer Deposition

High performance bilayer MoTe2 transistors with co-sputtered ternary HfAlO2 high-k dielectric

Preparation and optoelectronic performance of two-dimensional MoSe2/WSe2 lateral and vertical heterostructures

Molecular Beam Epitaxy Scalable Growth of Wafer‐Scale Continuous Semiconducting Monolayer MoTe2 on Inert Amorphous Dielectrics

High-performance Transistors Based on Monolayer CVD MoS2 Grown on Molten Glass

Fabrication of p-type 2D single-crystalline transistor arrays with Fermi-level-tuned van der Waals semimetal electrodes

Wafer-scale Transferred Multilayer MoS2 for High Performance Field Effect Transistors

Millimeter-Scale Single-Crystalline Semiconducting MoTe2 Via Solid-to-Solid Phase Transformation.

MoTe2 Field-Effect Transistors with Low Contact Resistance through Phase Tuning by Laser Irradiation

Sub-10 Nm Monolayer MoS2 Transistors Using Single-Walled Carbon Nanotubes As an Evaporating Mask

Robust transport of charge carriers in in-plane 1T′-2H MoTe2 homojunctions with ohmic contact